Theory of the MOS transistor in weak inversion-new method to determine the number of surface states

Overstraeten, R.J. Van; Declerck, G.; Muls, P.

doi:10.1109/t-ed.1975.18119

Cited by 173 publications

(57 citation statements)

References 8 publications

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“…Metal-oxide-semiconductor FETs (MOSFETs), an elementary unit of integrated circuits, must be constantly improved to satisfy nanoelectronics requirements. 1,2 A key factor in this regard is the subthreshold swing (SS), which is derived from the transfer characteristics of the FET and calculated as follows, 3 SS ¼ dV GS …”

Section: Introductionmentioning

confidence: 99%

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Wang

Chen

et al. 2017

npj 2D Mater Appl

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Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits' ultra-high power dissipation and because the conventional FETs cannot overcome the subthreshold swing (SS) limit of 60 mV/decade. In this work, the ordinary oxide of the FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ a two-dimensional (2D) semiconductor, such as MoS 2 and MoSe 2 , as the channel. This 2D Fe-FET achieves an ultralow SS of 24.2 mV/dec over four orders of magnitude in drain current at room temperature; this sub-60 mV/dec switching is derived from the Fe negative capacitance (NC) effect during the polarization of ferroelectric domain switching. Such 2D NC-FETs, realized by integrating of 2D semiconductors and organic ferroelectrics, provide a new approach to satisfy the requirements of next-generation low-energy-consumption integrated nanoelectronic circuits as well as the requirements of future flexible electronics.

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Section: Introductionmentioning

confidence: 99%

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Wang

Chen

et al. 2017

npj 2D Mater Appl

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show abstract

“…In the WI region, the drain current mechanism is due to diffusion. According to [12], (25) where is the channel conductance per unit length at the source terminal and is the thermal voltage . The mean-square value of is given by (26) where (27) The total drain noise current can be found as follows:…”

Section: Appendix Amentioning

confidence: 99%

Modified derivative superposition method for linearizing FET low noise amplifiers

Aparin¹,

Larson²

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers

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“…In calculating the transfer characteristics of the system, for the input FET we employ the model of longchannel transistor in weak inversion (Overstraeten, 1975). The noise charge Q(t) integrated under the storage gate of the direct injection readout circuit is calculated as a McDonalds function expressed in terms of spectral current density S i (ω) (Buckingham, 1983):…”

Section: A Mathematical Model For the System 'Ir Photodiode -Direct-imentioning

confidence: 99%

Mathematical Modeling of Multi-Element Infrared Focal Plane Arrays Based on the System ‘Photodiode – Direct-Injection Readout Circuit’

Lee¹,

Polovinkin²

2012

Photodetectors

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Theory of the MOS transistor in weak inversion-new method to determine the number of surface states

Cited by 173 publications

References 8 publications

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Modified derivative superposition method for linearizing FET low noise amplifiers

Mathematical Modeling of Multi-Element Infrared Focal Plane Arrays Based on the System ‘Photodiode – Direct-Injection Readout Circuit’

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