Theory of transient photovoltaic effects used for measurement of lifetime of carriers in solar cells

Dhariwal, S.R.; Kothari, L. S.; Jain, S.C.

doi:10.1016/0038-1101(77)90111-3

Cited by 31 publications

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“…Indeed, the transient electrical photoresponses give a group of methods for measuring the carrier lifetime, in which the carrier lifetime is found directly from the decay (or increase) of voltage or current signals [2]. These photoresponses and associated methods are based on either the variation in conductivity produced by both electrons and holes induced in excess in the sample [3,4] photoconductivity methods using voltage (1) 0394V03C3(t) or current AI,(t) signals depending on whether the sample studied is under constant polarization current or voltage -, or on the diffusion of only the minority carriers induced in excess in the samplediffusion current method [5,6] or even open-circuit voltage methods [7,8]. Viewed as a whole, the above methods (') then may have the advantages of covering various sample structures, including devices at their successive manufacturing stages, and of being utilizable with a single experimental set up.…”

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confidence: 99%

“…The following study will thus attempt first of all to compare the key expressions and conditions of validity of each of the above methods, starting with the existing analytical studies of transient photoresponses for uniform carrier injection in an homogeneous sample [3,6,7,8] (Section 2.1). This makes it possible to compare the characteristics of each method considered and to estimate its possibility of application under weak and strong carrier injection conditions (Section 2.2).…”

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“…-The electrical photoresponse expressions are obtained by solving the continuity and transport equations of the carriers and by taking into account the sample boundary conditions. The detailed calculations for uniform photoexcitation at weak carrier injection levels are given in references [3,6] and [8] for the transient photoconductivity, diffusion photocurrent and open circuit photovoltage, respectively.…”

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Carrier lifetime measurements from transient electrical photoresponses

Bielle-Daspet

Johan

Espioussas

1980

Rev. Phys. Appl. (Paris)

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2014 Les durées de vie mesurées à partir des photoréponses de conductivité (sous courant ou tension constants de polarisation), de courant de diffusion et de tension de circuit ouvert, créées par excitation transitoire de porteurs, sont considérées. Partant des expressions analytiques, la discussion porte sur les expressions clef, les conditions de validité et les applications de chacune des méthodes discutées, en supposant une excitation uniforme de porteurs dans un échantillon unidimensionnel et homogène; la discussion tient compte des caractéristiques de l'échantillon (épaisseur W, durée de vie volumique 03C4v, vitesses de recombinaison aux surfaces s1,2, coefficient de diffusion D des porteurs minoritaires et densité d'équilibre en porteurs majoritaires p0), de la densité de porteurs en excès 0394p, de la durée T de l'impulsion lumineuse et des temps t auxquels la réponse est considérée. L'étude expérimentale porte surtout sur des échantillons de silicium d'épaisseur jusqu'à 1 mm, éclairés par des impulsions laser de durée T = 2 à 30 ns. Les réponses à une lumière pénétrante (03BB = 1,06 03BCm, 03B1 = 40 cm-1 dans le silicium usuel; 0394p = 10-4 à 102 p0) et à une lumière fortement absorbée (03BB = 0,69 ou 0,53 03BCm, 03B1 = 2 x 103 et 104 cm-1 ; intensité du faisceau E0 = 10-4 à 103 mJ/cm2) sont utilisées pour montrer sous quelles conditions les photoréponses observées conduisent aux mêmes valeurs mesurées de la durée de vie des porteurs, et donnent une mesure de leur durée de vie volumique.Abstract. 2014 Carrier lifetime measurements from photoconductivity (with constant current and constant voltage polarizations of the sample), diffusion photocurrent and open circuit photovoltage responses to transient carrier excitation are compared. Using analytical expressions, the key expressions, conditions of validity and applications of each method are discussed, assuming uniform carrier injection in an unidimensional sample of homogeneous material; the discussion is done taking into account the sample characteristics (width W, bulk lifetime 03C4v, surface recombination velocities s1,2, minority carrier diffusion coefficient D, equilibrium majority carrier density p0), excess carrier density 0394p, light pulse duration T and times t of the response considered. The experimental study especially deals with silicon samples up to W = 1 mm thick, illuminated by T = 2 ns to 30 ns laser beams.The responses to penetrating light (03BB = 1.06 03BCm, 03B1 = 40 cm-1 in ordinary silicon, 0394p = 10-4 to 102 p0) and strongly absorbed light (03BB = 0.69 or 0.53 03BCm, 03B1 = 2 x 103 and 104 cm-1, beam intensity E0 = 10-4 to 103 mJ/cm2) are used to show the conditions under which the photoresponses observed lead to the same measured values of carrier lifetime and give bulk lifetime measurement.

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Carrier lifetime measurements from transient electrical photoresponses

Bielle-Daspet

Johan

Espioussas

1980

Rev. Phys. Appl. (Paris)

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“…This leakage time is much larger than the minority carrier lifetime of the underlying layers forming the junction. Based on the depletion approximation, open-circuit voltage decay including the effect of charge storage in the space-charge region, can be described by the following differential equation [3,4]: decay [3,4,5]. To estimate the charge-leakage time, we must know both the dark current and junction capacitance.…”

Section: Estimation Of Charge-leakage Timementioning

confidence: 99%

Modeling of recombination lifetimes in charge-separation device structures

2003

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Recombination processes in semiconductors are inhibited by charge-separation mechanisms that are produced in structures such as pn junctions. In this work, we calculated the recombination rates in Si and GaAs n+p junction structures by both analytical and numerical techniques. Transport effects can be divided into three physical phenomena. The first is the flow of carriers that results in the build up of a junction voltage or charge-separation. The time constant of this effect is determined by the junction dopant concentrations and the mobilities. The second is the flow of carriers due to diffusion. The time constant of this event is a function of the carrier diffusion coefficient and physical width of the absorbing medium. In most semiconductor structures, this time constant is relatively short relative to the recombination lifetime. The third effect is the discharge of the open-circuit voltage of the junction by minority carrier charge injection. A heuristic analysis of the long-term decay in this regime indicates that the decay time varies as CkT /qJ0, where C is the junction capacitance and J0 is the dark current. In this regime, the decay time is a function of recombination lifetime through the dependence of J0, but the measured excess carrier decay time is often not the true recombination lifetime of the underlying materials.

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“…Dhariwal, Kothari und Jain [8] leiten im Rahmen einer allgemeinen Theorie des transienten Verhaltens der Solarzelle einen Ausdruck fiir das zeitliche Abklingen der ~berschugtr~tger ab. Die L6sung der zeitabhitngigen Diffusionsgleichung far Minorit~ttstr~i-ger wird mit Hilfe der Fourier-Transformation gewonnen.…”

Section: Introductionunclassified

Theorie der PCD-Methode f�r Licht geringer Eindringtiefe

Gerlach

1983

Archiv f. Elektrotechnik

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Ubersicht : Die Theorie der PCD-Methode wird erweitert auf den Fall, dab das Licht in der Halbleiterprobe vollstgndig absorbiert wird. Das transiente Verhalten der Photoleitf~higkeit wird sowohl ftir rechteckfSrmige Lichtpulse heliebiger Pulsdauer als auch fflr ~-f6rmige Lichtpulse analysiert. Ausffihrlich diskutiert wird das Abklingen tier Photoleitfiihigkeit. Besondere Beachtung wird der Auswirkung der OberflAchenrekombination auf die effektive Lebensdauer tier ~berschui3tri~ger und die Abklingrate der ~berschu~trAger unmittelbar nach dem Ende des Lichtpulses geschenkt. Theory of the PCD-Method for Light of Low Penetration DepthContents: The theory of the PCD-method is extended to conditions, where the light is fully absorbed in the semiconductor sample. The transient behaviour of photoconductivity is analysed for rectangular light pulses of arbitrary pulse length as well as for ~-pulses. The decay of photoconductivity is extensively discussed. Most emphasis is given to the influence of surface recombination on the effective lifetime of excess carriers and on the decay rate of the excess carriers immediately after the end of the light puls.

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Theory of transient photovoltaic effects used for measurement of lifetime of carriers in solar cells

Cited by 31 publications

References 2 publications

Carrier lifetime measurements from transient electrical photoresponses

Carrier lifetime measurements from transient electrical photoresponses

Modeling of recombination lifetimes in charge-separation device structures

Theorie der PCD-Methode f�r Licht geringer Eindringtiefe

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