2005
DOI: 10.1081/amp-200042048
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Thermal Analysis of a Silicon Wafer Processing Combination Bake-Chill Station Used in Microlithography

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Cited by 9 publications
(4 citation statements)
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“…The temperature and baking time of the photoresist film were 100 ∘ C and 10 min, respectively. Hard baking is performed after the development of the substrate to minimize outgassing [21] and improves the thermal and physical stability. Hard baking was performed at 120 ∘ C for 10 min.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The temperature and baking time of the photoresist film were 100 ∘ C and 10 min, respectively. Hard baking is performed after the development of the substrate to minimize outgassing [21] and improves the thermal and physical stability. Hard baking was performed at 120 ∘ C for 10 min.…”
Section: Methodsmentioning
confidence: 99%
“…After the development of the photoresist, the film was washed with distilled water to wash out residual developer solution and dried using filter paper. The process from the photoresist coating to washing out the developer is called the microlithography process [21].…”
Section: Methodsmentioning
confidence: 99%
“…Distributing reliable power, ground, data, address and other signals among IC chips and microelectronics devices through interconnections at such high speeds is a challenge (Kaushik et al , 2006). Precision machining/manufacturing of silicon, ceramic and polymer substrates (Zhong and Lee, 2001; Narasimhan, 2005; Zimmermann et al , 2005; Young et al , 2006; Zhong et al , 2006a; Schoenfelder et al , 2007), microelectronics packaging, and detection/analysis of various defects (Paehler et al , 2007) also face more and more new challenges.…”
Section: Introductionmentioning
confidence: 99%
“…The developer used in this project was MF-321 by Shipley Inc. [44], and the wafers were immersed in the developer for 60 seconds for optimum pattern Upon developing the patterns, the wafer is hard baked. Hard baking is the process of post development heating of the wafers and UV-cross linking then to improve the etch resistance of the PR and minimize out-gassing [45]. The temperature and length of this heating step is critical in that overheating can melt the photoresist.…”
Section: Photoresist Spin Coating and Optical Lithographymentioning
confidence: 99%