Thermal analysis of active layer in organic thin-film transistors

Shin, Moo Whan; Jang, Sun Ho

doi:10.1016/j.orgel.2012.01.032

Cited by 14 publications

(10 citation statements)

References 8 publications

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“…16 The present results clearly point out the relevant role of self-heating in determining the effects of bias stress in OTFTs and suggest that device instability is a complex combination of bias and temperature conditions. This work has been funded in the frame of the European FP7 project COSMIC (Grant Agreement No.…”

supporting

confidence: 60%

“…Channel temperature can easily rise, depending on the dissipated power and on the thermal conductivity of the substrate, at temperatures >50 C, as recently reported by Shin and Jang. 16 As a result, bias stress effects in this regime are expected to be also influenced by self-heating and in this work we will show evidences of this. P-channel OTFTs, with staggered top-gate configuration, were fabricated on polyethylene-naphtalate (PEN) substrate in a CMOS process.…”

mentioning

confidence: 56%

“…5) suggests that in saturation condition self-heating of the device occurs. Indeed, it has been already shown that, due to joule heating and considering that the devices are fabricated on thermally insulating substrates (PEN in our case), the device temperature can rise up to 50-60 C. 16 Therefore, self-heating of the device increases the channel temperature and, consequently, triggers the second instability mechanism. Since the bias stress is performed at constant gate and drain bias, the power dissipated in the device, P ¼ I d Â V ds_stress , is not constant during bias stress, as shown in Fig.…”

mentioning

confidence: 82%

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Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

Rapisarda¹,

Fortunato²,

Valletta³

et al. 2012

Applied Physics Letters

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Bias stress instability has been investigated in printed p-channel organic thin film transistors. The observed instability is related to two mechanisms: one, dominating at low T and causing “mobile ions” like threshold voltage variations is probably due to creation/annihilation of acceptor-like states; the second one, causing charge-trapping like instability, dominates at high T. High drain voltage bias stress experiments, inducing device self-heating, present threshold voltage variations, suggest a channel temperature rise ranging from 50 to 60 °C. The results point out the role of self-heating on the bias-stress instability, which is related to a combination of bias and temperature conditions.

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supporting

confidence: 60%

mentioning

confidence: 56%

mentioning

confidence: 82%

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Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

Rapisarda¹,

Fortunato²,

Valletta³

et al. 2012

Applied Physics Letters

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“…The hopping frequency ν is set to 10 þ10 s −1 . [30][31][32] In addition, it should be noted that the temperature of the carriers themselves cannot be recorded in the experiments; instead, it is the temperature of the surrounding environment near the contact which is documented in the report. For the contact between Al and Alq 3 , the carrier injection begins with direct hopping of the electrons to the third organic node and since better correlations to the experiment are obtained, b is set to 1.8 nm.…”

Section: Injection At Low Temperatures and Low Electric Fieldsmentioning

confidence: 99%

Alternative model for injection-limited current into organic solids

et al. 2015

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This study demonstrates an analytical relation that models the carrier injection in metal-organic interfaces and which considers two consecutive carriers hopping as the injection mechanism. The new formula has superior attributes and can surpass conventional relations, in particular the thermionic emission-diffusion formula. For example, the model can properly trace the temperature dependency of the injection up to temperatures as low as 30 K and the full range of electric fields. Also, the prominence of joule heating for proper modeling of the injection is presented. This study examines the validity of the introduced analytical equation by exploring the injection in several practical contacts extracted from the literature, the results of which are discussed in this paper.

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“…In addition to the impact of mechanical strain, mobility is also sensitive to temperature changes [Shin and Jang 2012;Zhu et al 2005]. In previous research, the relation between mobility and temperature has been evaluated within the temperature range of 30 • C to 180 • C as illustrated in Figure 2.…”

Section: Tft Technologymentioning

confidence: 99%

Placement optimization of flexible TFT circuits with mechanical strain and temperature consideration

Lin

2014

J. Emerg. Technol. Comput. Syst.

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Mobility is the primary device parameter affecting circuit performance in flexible thin-film transistor (TFT) technologies, and is particularly sensitive to the change of mechanical strain and temperature. However, existing algorithms only consider the impact of mechanical strain in cell placement of flexible TFT circuits. Without taking temperature into consideration, mobility may be dramatically decreased which leads to circuit performance degradation. This article presents the first work to minimize the mobility variation caused by the change of both mechanical strain and temperature. Experimental results show that the proposed algorithms can effectively and efficiently reduce the increasing critical path delay. ACM Reference Format: Lin, J.-L., Wu, P.-H., and Ho, T.-Y. 2014. Placement optimization of flexible TFT circuits with mechanical strain and temperature consideration.

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Thermal analysis of active layer in organic thin-film transistors

Cited by 14 publications

References 8 publications

Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

Alternative model for injection-limited current into organic solids

Placement optimization of flexible TFT circuits with mechanical strain and temperature consideration

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