Thermal and electrical reliability analysis of TO-247 for bonding method, substrate structure and heat dissipation bonding material

Kim, Dong Hwan; Oh, Aesun; Park, Eun‐Young; Kim, Kyung-Hyun; Jeon, Sung-Jae; Bae, Hae-Young

doi:10.1109/ectc32696.2021.00308

Cited by 3 publications

(4 citation statements)

References 11 publications

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“…78,81 In any case, and regardless of the approach toward reliability, power semiconductors usually fail because they operate under conditions that stress beyond their maximum ratings. Moreover, there are many factors affecting reliability such as electrical faults, heat, chemicals, radiation, and mechanical stresses 80 which can occur in different layers of discrete devices******* and power modules 258,259 (Section 4):…”

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

“…In any case, and regardless of the approach toward reliability, power semiconductors usually fail because they operate under conditions that stress beyond their maximum ratings. Moreover, there are many factors affecting reliability such as electrical faults, heat, chemicals, radiation, and mechanical stresses 80 which can occur in different layers of discrete devices******* and power modules 258,259 (Section 4): Interconnection ‐ Figure 16A‐①: In general, when a wire‐bond connection fails, the device may cause severe failure and, even, open circuit faults 260 . In fact, wire‐bond degradation is one of the most common failure modes for power modules 252 .…”

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

“…******* ******* The discrete devices present a vertical structure similar to the power modules. There are interconnections with wire‐bonding (or equivalent technology), metallizations, a substrate and attach‐solder joints 258 …”

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confidence: 99%

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The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

See 1 more Smart Citation

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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“…Because faults may generate after several years of application before causing device failure, accelerated lifetime tests (ALT) are performed to proactively verify the reliability of SiC MOSFET under various working conditions. Thermal cycling is a critical ALT reliability test in which periodic temperature stress is applied to the device under test to induce failures due to the mismatch coefficients of thermal expansion (CTE) between adjacent layers of the package [30], [31], [32]. Package failure modes during thermal cycling tests include die attachment layer voids and creaks and RDL peeling, which increased the R DS(on) value.…”

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confidence: 99%

A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

Chen

Jiang

Meda

et al. 2023

IEEE Trans. Electron Devices

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SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities associated with existing wirebonding packaging methods. To address this challenge, a 1200 V/136 A fan-out panel-level packaging (FOPLP) SiC MOSFET with a size of 8 × 8 × 0.75 mm was proposed. The electrical parameters of the devices were characterized experimentally. Both the static and dynamic parameters of the package matched the bare die values, which confirmed the functioning of the proposed packaging method for SiC MOSFET. The package parasitic inductance, thermal resistance, and soldering stress were analyzed through simulations. The reliability of the packages was evaluated by performing the thermal cycling test. The

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Optimization of MOSFET Copper Clip to Enhance Thermal Management Using Kriging Surrogate Model and Genetic Algorithm

Cheon,

Jung,

et al. 2024

Mathematics

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Metal–oxide–semiconductor field-effect transistors (MOSFETs) are critical in power electronic modules due to their high-power density and rapid switching capabilities. Therefore, effective thermal management is crucial for ensuring reliability and superior performance. This study used finite element analysis (FEA) to evaluate the electro-thermal behavior of MOSFETs with copper clip bonding, showing a significant improvement over aluminum wire bonding. The aluminum wire model reached a maximum temperature of 102.8 °C, while the copper clip reduced this to 74.6 °C. To further optimize the thermal performance, Latin Hypercube Sampling (LHS) generated diverse design points. The FEA results were used to select the Kriging regression model, chosen for its superior accuracy (MSE = 0.036, R2 = 0.997, adjusted R2 = 0.997). The Kriging model was integrated with a Genetic Algorithm (GA), further reducing the maximum temperature to 71.5 °C, a 4.20% improvement over the original copper clip design and a 43.8% reduction compared to aluminum wire bonding. This integration of Kriging and the GA to the MOSFET copper clip package led to a significant improvement in the heat dissipation and overall thermal performance of the MOSFET package, while also reducing the computational power requirements, providing a reliable and efficient solution for the optimization of MOSFET copper clip packages.

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Thermal and electrical reliability analysis of TO-247 for bonding method, substrate structure and heat dissipation bonding material

Cited by 3 publications

References 11 publications

The role of power device technology in the electric vehicle powertrain

The role of power device technology in the electric vehicle powertrain

A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

Optimization of MOSFET Copper Clip to Enhance Thermal Management Using Kriging Surrogate Model and Genetic Algorithm

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