Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki; Iwasa, Naruhito

doi:10.1143/jjap.31.l139

Cited by 1,057 publications

(516 citation statements)

References 7 publications

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“…The requirement of high-temperature annealing for donor activation may suggest that Si after the growth is passivated by other impurities or intrinsic defects, similar to the case of Mg acceptors in GaN. 40 Unfortunately, the DX structure with the neutral state d 0 lying above the ground state DX − makes it impossible to saturate the EPR transition even using the maximum available microwave power of 200 mW. Therefore, electron nuclear double resonance experiments cannot be performed for chemical identification of the donor.…”

Section: Origin Of the Donormentioning

confidence: 99%

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Són

Goto

Nomura

et al. 2016

Journal of Applied Physics

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Electron paramagnetic resonance (EPR) was used to study the donor that is responsible for the n-type conductivity in unintentionally doped (UID) β-Ga2O3 substrates. We show that in asgrown material, the donor requires high temperature annealing to be activated. In partly activated material with the donor concentration in the 10 16 cm -3 range or lower, the donor is found to behave as a negative-U center (often called a DX center) with the negative charge

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Section: Origin Of the Donormentioning

confidence: 99%

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Són

Goto

Nomura

et al. 2016

Journal of Applied Physics

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“…This could be attributed to the minor surface decomposition during the high temperature annealing, leading to the degradation of PL signals. 23 The production of lattice imperfections in Mn-implanted and annealed samples could be deduced from Raman spectra, as shown in Fig. 9.…”

Section: B Correlation Between Magnetic Properties and Mn-induced Dementioning

confidence: 99%

Microstructural, optical, and magnetic properties of Mn-implanted p-type GaN

Baik

Lee

Shon

et al. 2003

Journal of Applied Physics

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The effect of microstructural change on both magnetic and optical properties of Mn-implanted p-type GaN was studied. A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequently annealing. The magnetization measurement showed that the Curie temperature was the highest in the 800°C annealed sample due to the formation of Ga-Mn magnetic phases. The annealing at a higher temperature of 900°C produced antiferromagnetic Mn-N compounds such as Mn 6 N 2.58 and Mn 3 N 2 , leaving N vacancies. This provides evidence that N vacancies played a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. The photoluminescence peak at 2.92 eV became strong after annealing at 800°C, indicating an increase in hole concentration due to an enhanced activation of Mn impurities in p-type GaN. The intensity of Raman modes at 290 and 670 cm Ϫ1 decreased drastically as annealing temperature increased ͑Ͼ800°C͒, due to the reduction in Mn-implantation-induced lattice imperfections. From this, it is proposed that the increase in magnetic properties of Mn-implanted GaN originated from the enhancement in the crystallinity as well as the production of Ga-Mn magnetic phases.

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“…1,2 The further realization that activation of hydrogenpassivated Mg acceptors by thermal annealing could produce p-type GaN opened the door for many device demonstrations including light-emitting diodes, laser, detectors, and transistors. [3][4][5][6][7][8][9][10] While further advances in material quality will lead to additional device improvements, many advanced device structures will require improvements in device processing technology as well. One area of processing technology that should play an enabling role, particularly for electronic devices, is ion implantation, which can be used to produce selective area doping or compensation.…”

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confidence: 99%

Electrical and structural analysis of high-dose Si implantation in GaN

Zolper

Tan

Williams

et al. 1997

Applied Physics Letters

110

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For the development of ion implantation processes for GaN to advanced devices, it is important to understand the dose dependence of impurity activation along with implantation-induced damage generation and removal. We find that Si implantation in GaN can achieve 50% activation at a dose of 1×1016 cm−2, despite significant residual damage after the 1100 °C activation anneal. The possibility that the generated free carriers are due to implantation damage alone and not Si-donor activation is ruled out by comparing the Si results to those for implantation of the neutral species Ar. Ion channeling and cross-sectional transmission electron microscopy are used to characterize the implantation-induced damage both as implanted and after a 1100 °C anneal. Both techniques confirm that significant damage remains after the anneal, which suggests that activation of implanted Si donors in GaN doses not require complete damage removal. However, an improved annealing process may be needed to further optimize the transport properties of implanted regions in GaN.

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Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Cited by 1,057 publications

References 7 publications

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Microstructural, optical, and magnetic properties of Mn-implanted p-type GaN

Electrical and structural analysis of high-dose Si implantation in GaN

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