Thermal annealing of liquid phase epitaxial gallium arsenide

Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

“…A further inquiry into the origin of their LPE-GaAs (Eberhardt et al 1971;Hicks and Manley 1969) reveals that the epitaxial layer came from a Spectrosil silica cruciblejSpectrosil furnace reaction tube growth system, similar to the arrangement used in our study. Further evidence for the high purity of the LPE material grown in our study comes from DLTS measurements of the epitaxial layers (Alexiev 1990). Those measurements examined the material over the temperature range from 380 to 11 K, and showed no deep level traps at a sensitivity of NT 2: 1011 cm-3 , confirming the high purity of the material.…”

“…Radiation detectors made so far from the LPE material have shown good energy resolution, qualitatively indicating high purity material (Alexiev and Butcher 1992). Also, deep level transient spectroscopy (DLTS) measurements have shown no detectable deep level recombination centres (Alexiev 1990)-again indicating high purity material. The Lp,n measurements can establish semiconductor purity because the presence of recombination centres within an epitaxial layer will result in reduced values of Lp,n.…”

Liquid-Phase Epitaxy

“…They determined that silicon incorporation is not suppressed by addition of ppm levels of oxygen to the hydrogen growth ambient, as was sometimes supposed. Alexiev et al [108] reviewed chemical reactions, kinetics, and mass transfer that led to contamination of gallium-rich LPE melts with silicon, e.g., All of the crucible materials contributed to various deep levels in the GaAs.…”