19th Topical Meeting on Electrical Performance of Electronic Packaging and Systems 2010
DOI: 10.1109/epeps.2010.5642793
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Thermal-aware reliability analysis of nanometer designs

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Cited by 7 publications
(1 citation statement)
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“…The temperature-related effects have an impact on not only perfonnance but reliability of LSls such as electromigration, time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Consequently, analysis of hot spots and temperature distributions in CMOS LSI become important for advanced LSI design [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…The temperature-related effects have an impact on not only perfonnance but reliability of LSls such as electromigration, time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Consequently, analysis of hot spots and temperature distributions in CMOS LSI become important for advanced LSI design [1][2][3].…”
Section: Introductionmentioning
confidence: 99%