Thermal Behavior of Alkylsiloxane Self-Assembled Monolayers on the Oxidized Si(100) Surface

Kluth, G. Jonathan; Sung, Myung Mo; Maboudian, Roya

doi:10.1021/la970135r

Cited by 164 publications

(146 citation statements)

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“…These results agree with Ref. 19 where degradation of ODTMS SAMs on oxidized silicon ͑100͒ surfaces was found between 740 K and 815 K and assigned to cleavage of C-C bonds. For C 4 H 9 fragment ͑57 amu͒ a minor peak at T 1 = 650 K is observed for reference and ODTMS-modified surfaces.…”

supporting

confidence: 93%

Chemical functionalization of GaN and AlN surfaces

Baur

Steinhoff

Hernando

et al. 2005

Applied Physics Letters

126

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The covalent functionalization of GaN and AlN surfaces with organosilanes is demonstrated. Both octadecyltrimethoxysilane and aminopropyltriethoxysilane form self-assembled monolayers on hydroxylated GaN and AlN surfaces, confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The monolayer thickness on GaN was determined to 2.5± 0.2 nm by x-ray reflectivity. Temperature-programmed desorption measurements reveal a desorption enthalpy of 240 kJ/ mol. The application of these devices for electronic detection of specific biomolecular processes is a promising approach for novel biosensors based on molecular recognition, such as specific antibody detection or label-free detection of deoxyribonucleic acid ͑DNA͒ hybridization. For this purpose, the covalent attachment of specific molecules with controlled structural order and composition on group III-nitride devices is a basic requirement.Covalent coupling of biomolecules to oxidized and hydrogen-terminated silicon surfaces has been investigated in numerous works during recent decades. 3,4 Covalent grafting of self-assembled monolayers ͑SAMs͒ of organosilanes on oxidized silicon surfaces 5-7 is widely used as the first step of surface functionalization with biomolecules for electronic detection of enzyme activity and DNA hybridization with Si-based field effect transistors. 8,9 In contrast, the surface chemistry on AlGaN alloys has not yet been studied in great detail. Pioneering work has been carried out by Bermudez, 10,11 who has analyzed the adsorption of different organic molecules, such as anilines or octanethiols on GaN surfaces, from the gas phase. In a recent publication Kang et al. 12 have reported the electrical detection of immobilized proteins on AlGaN / GaN transistors, modified with aminopropyltriethoxysilane ͑APTES͒ molecules in a liquid phase reaction. However, the covalent immobilization of molecules was not proven.In this letter, we report the covalent attachment of SAMs of octadecyltrimethoxysilane ͑ODTMS͒ and APTES on hydroxylated GaN and AlN surfaces. Complementary analysis by x-ray photoelectron spectroscopy ͑XPS͒, atomic force microscopy ͑AFM͒, and temperature-programmed desorption mass spectrometry proves covalent coupling of the SAMs to the surface. Immobilization of single-stranded 20-mer oligonucleotides on APTES-modified nitride surfaces and hybridization is demonstrated by fluorescence microscopy.GaN and AlN layers with a thickness of 2 m were grown by metalorganic chemical vapor deposition ͑MOCVD͒ on c-plane sapphire substrates. AFM over a scan area of 4 m 2 revealed a root-mean-square surface roughness of 0.2 nm for GaN and 0.3 nm for AlN, respectively.The presence of hydroxyl groups on the hydrophilic surface is an essential requirement for the silanization process. 5-7 Therefore, the substrates were immersed in H 2 SO 4 :H 2 O 2 ͑3:1͒ solution for 20 min, rinsed with deionized water ͑18 M⍀ cm, Millipore͒ and dried under nitrogen flux prior to silanization. In addition to the activation of surface hydroxyl groups, this...

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supporting

confidence: 93%

Chemical functionalization of GaN and AlN surfaces

Baur

Steinhoff

Hernando

et al. 2005

Applied Physics Letters

126

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“…Maboudian et al have reported on the thermal degradation behavior in vacuum of OTS [36] and FDTS [37] on oxidized surfaces. They found that OTS coatings are stable in vacuum up to 467…”

Section: Fdts Fots Fomds Fomms Fotesmentioning

confidence: 99%

Vapor-Phase Self-Assembled Monolayers for Anti-Stiction Applications in MEMS

Zhuang

Hansen

Knieling

et al. 2007

J. Microelectromech. Syst.

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Abstract-We have investigated the anti-stiction performance of self-assembled monolayers (SAMs) that were grown in vapor phase from six different organosilane precursors:, and CH 3 (CH 2 ) 17 (CH 2 ) 2 SiCl 3 (OTS). The SAM coatings that were grown on silicon substrates were characterized with respect to static contact angle, surface energy, roughness, nanoscale adhesive force, nanoscale friction force, and thermal stability. The best overall anti-stiction performance was achieved using FDTS as precursor for the SAM growth, but all coatings show good potential for solving in-use stiction problems in microelectromechanical systems devices.[

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“…Silylation, also known as silane grafting, has been proven to be an efficient method to modify inorganic materials [1][2][3][4]. Comparing with surfactant intercalation, silylation enables a durable immobilization of the organic moieties by forming covalent bonds between silane and substrates.…”

Section: Introductionmentioning

confidence: 99%

Tailoring surface properties and structure of layered double hydroxides using silanes with different number of functional groups

et al. 2014

Journal of Solid State Chemistry

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Thermal Behavior of Alkylsiloxane Self-Assembled Monolayers on the Oxidized Si(100) Surface

Cited by 164 publications

References 32 publications

Chemical functionalization of GaN and AlN surfaces

Chemical functionalization of GaN and AlN surfaces

Vapor-Phase Self-Assembled Monolayers for Anti-Stiction Applications in MEMS

Tailoring surface properties and structure of layered double hydroxides using silanes with different number of functional groups

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