Thermal characterization system for transient thermal impedance measurement and power cycling of IGBT modules

Zheng, Hanguang; Ngo, Khai D. T.; Lü, Gongxuan

doi:10.1016/j.microrel.2015.08.016

Cited by 6 publications

(1 citation statement)

References 13 publications

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“…Fig. 1 on the right shows a cross sectional view of a typical power package (Zheng et al, 2015). In fact, a hot spot generated inside the power element (Kibushi et al, 2017) and thermal resistances generated at the interface of bonding material, thermal interface material (TIM), and insulating material as well as in the heat spreader rise up to the surface in the thermal management of high heat flux electronics as described in detail in section 2.…”

Section: Introductionmentioning

confidence: 99%

Thermal management of automotive SiC-based on-board inverter with 500 W/cm<sup>2</sup> in heat flux, and Two-phase immersion cooling by breathing phenomenon spontaneously induced by lotus porous copper jointed onto a grooved heat transfer surface

Yuki

Kibushi

Tsuji

et al. 2020

JTST

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Section: Introductionmentioning

confidence: 99%

Thermal management of automotive SiC-based on-board inverter with 500 W/cm<sup>2</sup> in heat flux, and Two-phase immersion cooling by breathing phenomenon spontaneously induced by lotus porous copper jointed onto a grooved heat transfer surface

Yuki

Kibushi

Tsuji

et al. 2020

JTST

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Thermal optimization of IGBT modules based on finite element method and particle swarm optimization

2017

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Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology

Wang

Xing

2022

J. Phys.: Conf. Ser.

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This paper presents a degradation behavior of high-power semiconductor modules, i.e., IGBT, with sintered silver by power cycle test and thermal cycle test. The electrical characteristics, such as on-state voltage drop, thermal resistance and leakage current, were studied. For power cycle test, the IGBT module still has an acceptable electrical performance after the 30 K power cycles. No noticeable changes can be found in the die-attach layer, while the DBC-attach layer begins to fail after 30 K power cycles. For the thermal cycling test, the electrical characteristics of the IGBT module were only tested within the first 300 cycles because the Al2O3 DBC substrate failed first before the failure of the bonding layers. Finally, finite element methods (FEM) were used to analyze thermal and mechanical stress distribution and failure mechanism of the bonding layers.

show abstract

Thermal characterization system for transient thermal impedance measurement and power cycling of IGBT modules

Cited by 6 publications

References 13 publications

Thermal management of automotive SiC-based on-board inverter with 500 W/cm<sup>2</sup> in heat flux, and Two-phase immersion cooling by breathing phenomenon spontaneously induced by lotus porous copper jointed onto a grooved heat transfer surface

Thermal management of automotive SiC-based on-board inverter with 500 W/cm<sup>2</sup> in heat flux, and Two-phase immersion cooling by breathing phenomenon spontaneously induced by lotus porous copper jointed onto a grooved heat transfer surface

Thermal optimization of IGBT modules based on finite element method and particle swarm optimization

Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology

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