Thermal conduction in doped single-crystal silicon films

Asheghi, Mehdi; Kurabayashi, Katsuo; Kasnavi, Reza; Goodson, Kenneth E.

doi:10.1063/1.1458057

Cited by 417 publications

(258 citation statements)

References 43 publications

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“…Comparisons between measurements of Si, Si:B and Si 0.99 Ge 0.01 allows us to study how Fourier theory failure in TDTR experiments relate to differences in MFP distributions because hole/phonon and point-defect/phonon scattering produce controlled differences in the MFP distributions of these materials 21 . We quantify the impact of hole/phonon and point-defect/phonon scattering on the L of Si with thermal conductivity relaxation time approximation (RTA) models for Si, Si:B and Si 0.99 Ge 0.01 (see Supplementary Methods).…”

Section: Resultsmentioning

confidence: 99%

“…In our second set of experiments, we perform TDTR measurements of Si, Si 0.99 Ge 0.01 and Si heavily doped with boron (Si:B) as a function of w 0 , f and temperature. The Ge in Si 0.99 Ge 0.01 preferentially scatters high-frequency phonons due to mass disorder 20 , while the boron in Si:B preferentially scatters low-frequency phonons due to hole/phonon scattering 21 . As a result, the MFP distributions are systematically different in Si, Si 0.99 Ge 0.01 and Si:B, allowing us to relate differences in the phonon dynamics to differences in how Fourier theory fails.…”

Section: )?mentioning

confidence: 99%

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Anisotropic failure of Fourier theory in time-domain thermoreflectance experiments

2014

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The applicability of Fourier's law to heat transfer problems relies on the assumption that heat carriers have mean free paths smaller than important length scales of the temperature profile. This assumption is not generally valid in nanoscale thermal transport problems where spacing between boundaries is small (o1 mm), and temperature gradients vary rapidly in space. Here we study the limits to Fourier theory for analysing three-dimensional heat transfer problems in systems with an interface. We characterize the relationship between the failure of Fourier theory, phonon mean free paths, important length scales of the temperature profile and interfacial-phonon scattering by time-domain thermoreflectance experiments on Si, Si 0.99 Ge 0.01 , boron-doped Si and MgO crystals. The failure of Fourier theory causes anisotropic thermal transport. In situations where Fourier theory fails, a simple radiative boundary condition on the heat diffusion equation cannot adequately describe interfacial thermal transport.

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Section: Resultsmentioning

confidence: 99%

Section: )?mentioning

confidence: 99%

Anisotropic failure of Fourier theory in time-domain thermoreflectance experiments

2014

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“…As the electric current is applied to the bilayer, a temperature gradient sets in due to differential Joule heating of both the layers (the electrical conductivity of the Ni 80 Fe 20 thin film layer is significantly larger than that of the p-Si layer). Thermal conductivity differences should also contribute to the thermal gradient; Ni 80 Fe 20 has a thermal conductivity of 23 W/mK (approximately for ~50 nm thick [15]), which is significantly lower than that of Si ( ~80 W/mK [16]). This temperature gradient (see We propose that spin-Hall effect (SHE) in p-Si could be the other mechanism responsible for spin polarization.…”

Section: (Figure 1)mentioning

confidence: 99%

Spin mediated enhanced negative magnetoresistance in Ni 80 Fe 20 and p-silicon bilayer

Lou

Kumar

2017

Solid State Communications

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“…The maximum temperature reaches 300.64 K and progressively decreases to 300 K toward the back of the substrate, where a heat sink is attached. It is worth noting that this level of temperature change does not significantly affect the carrier concentration 23 and, hence, the resonance and absorption conditions. Since the pillar is surrounded by air with very low thermal conductivity, the heat can barely escape to the side and to adjacent unit cells, even in the case of a nonuniform excitation.…”

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confidence: 99%

“…The thermal conductivity of the phosphorus-doped silicon is 149 W/K/m, compared with 0.026 W/K/m for air. 23 Since the cavity array is uniform, symmetric, and excited at normal incidence, there is no heat flow across unit cells and between the two halves of a unit cell. Hence, an adiabatic boundary condition is applied to all transverse boundaries and onto the two symmetry planes.…”

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confidence: 99%

Plasmonic Resonance toward Terahertz Perfect Absorbers

et al. 2014

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Metamaterial perfect absorbers have garnered significant interest with applications in sensing, imaging, and energy harnessing. Of particular interest are terahertz absorbers to overcome the weak terahertz response of natural materials. Here, we propose lossy plasmonic resonance in silicon-based annular microcavities for perfect terahertz absorption. This mechanism is in stark contrast to earlier demonstrations of conventional terahertz perfect absorbers that invoke Lorentzian electric and magnetic resonances. A fundamental cavity mode coupled to coaxial surface plasmon polaritons is responsible for the predicted exceptional absorption of −58 dB with a 90% absorption bandwidth of 30%. The performance is in agreement with experimental validation and consistent with critical coupling and resonance conditions. This specific cavity design possesses great thermal isolation and minimal electromagnetic coupling between unit cells. These unique features exclusive to the plasmonic cavity introduce a promising avenue for terahertz imaging with enhanced contrast, resolution, and sensitivity. KEYWORDS: metamaterial, plasmonics, perfect absorber, cavity mode, THz-TDS, terahertz, multiphysics simulation R esearch on perfect absorption has recently become a very active topic in the rapidly growing field of metamaterials. Providing enhanced performance and flexibility, perfect absorbers have been realized in different applications, including imaging, sensing, and energy harnessing. Soon after the seminal development by Padilla and co-workers, 1,2 metamaterial-based perfect absorbers have been demonstrated across the spectrum, from the microwave, to terahertz, infrared, and optical bands. 3 In general, these traditional perfect absorbers appeared in the form of metallic resonators on a ground plane, designed to eliminate the reflection and enhance the absorption. The perfect absorption mechanism was explained with the coexistence of Lorentzian electric and magnetic responses that match the impedance of the structure to free space and at the same time imposing large energy dissipation on resonance. Another explanation involved wave interference theory where multipath reflections originating from different interfaces lead to completely destructive interference in the direction of reflection. 4 Alternatively, perfect absorption was interpreted as nullified reflection by an out-of-phase wave reradiated from induced electric and magnetic surface currents. 5 Of relevance to this article are perfect absorbers at infrared and visible frequencies, where metals with relatively limited conductivity can support bound surface waves or surface plasmon polaritons (SPPs). Earlier implementations of plasmonic absorbers in the near-infrared 6,7 and visible 8,9 regimes adopted the conventional design of a metallic dipole array on a ground plane separated by a dielectric spacer. This concept was extended to random nanoparticles on a ground plane that exhibit electric and magnetic resonances for visible light absorption. 5,10 Unlike perfec...

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Thermal conduction in doped single-crystal silicon films

Cited by 417 publications

References 43 publications

Anisotropic failure of Fourier theory in time-domain thermoreflectance experiments

Anisotropic failure of Fourier theory in time-domain thermoreflectance experiments

Spin mediated enhanced negative magnetoresistance in Ni 80 Fe 20 and p-silicon bilayer

Plasmonic Resonance toward Terahertz Perfect Absorbers

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