2010
DOI: 10.1063/1.3490185
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Thermal conduction in thin films measured by optical surface thermal lensing

Abstract: Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure Appl. Phys. Lett. 101, 122414 (2012) Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application Appl. Phys. Lett. 100, 052105 (2012) Significantly improved piezoelectric thermal stability of cellular polypropylene films by high pressure fluorination and post-treatments J. Appl. Phys. 111, 024111 (2012) Dynamics of solidification in Al thin films measured using a nanocalorimeter Th… Show more

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Cited by 31 publications
(24 citation statements)
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“…When the thickness d is decreased below about 500 nm, a pronounced drop in k was observed, and for d~100 nm, a value k ~ 100 W/m°K was measured. Similar trends were found for Sn, Ag, and Al films [43]. For example, the results for Ag thin films, shown in Fig.…”
Section: Measured Thermal Conductivity Values For Au (Open Squares)supporting
confidence: 82%
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“…When the thickness d is decreased below about 500 nm, a pronounced drop in k was observed, and for d~100 nm, a value k ~ 100 W/m°K was measured. Similar trends were found for Sn, Ag, and Al films [43]. For example, the results for Ag thin films, shown in Fig.…”
Section: Measured Thermal Conductivity Values For Au (Open Squares)supporting
confidence: 82%
“…In particular, using the technique of optical surface lensing, thermal conduction in thin Au, Sn, Ag, and Al films was studied [43] at sizes as thin as d = 10 nm. In this work, the film heat capacity was assumed to be equal to that of a bulk system without an independent measurement.…”
Section: Measured Thermal Conductivity Values For Au (Open Squares)mentioning
confidence: 99%
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“…Other conditions in experiments include the surrounding temperature T ∞ ¼ 50°C, thickness and thermal conductivity H b ¼ 1 μm, k b ¼ 0.3 W∕m∕°C for BCB (24); H g ¼ 800 μm, k g ¼ 1.1 W∕m∕°C for glass (25); and H L ¼ 5 μm for μ-ILED. The thermal conductivity for Al interconnects is thickness dependent (26)(27)(28)(29), and is taken as 70 W∕m∕°C and 160 W∕m∕°C for 300 nm-thick and 1,000 nm-thick interconnects, respectively. The radius of the disk heat source is r 0 ¼ 56 μm to yield the same area as the square μ-ILED with dimensions of 100 × 100 μm 2 .…”
Section: Discussionmentioning
confidence: 99%
“…• C. The thermal conductivity and thickness are k g = 1.1 W m −1 K −1 (Lee & Cahill 1997) and H g = 800 mm for glass, k B = 0.3 W m −1 K −1 (Christiaens et al 2005) and H B = 1 mm for BCB, and k m = 70 and 160 W m −1 K −1 for the 300 and 1000 nm thick aluminium interconnects, respectively, because of their thickness-dependent thermal conductivity (La Spina et al 2006;Stojanovic et al 2007;Bourgoin et al 2010;Schmid et al 2010). The coefficient of heat convection is h = 25 W m −2 K −1 .…”
Section: Heat Transfer Model For the M-iled Systemmentioning
confidence: 99%