Thermal Conductivity of Amorphous Indium–Gallium–Zinc Oxide Thin Films

Yoshikawa, Toru; Yagi, Takashi; Oka, Nobuto; Jia, Junjun; Yamashita, Yuichiro; Hattori, Koichiro; Seino, Yutaka; Taketoshi, Naoyuki; Baba, Toshihide; Shigesato, Yuzo

doi:10.7567/apex.6.021101

Cited by 66 publications

(43 citation statements)

References 22 publications

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“…The results of the simulation assuming an increase in electron mobility of IGZO by self-heating of FETs are shown in Figure 7. The thermal conductivity of IGZO was 0.014 W cm 1 K 1 [15]. In this simulation, r was larger than 1.00.…”

Section: -3 Simulation Assuming Increase In Electron Mobility Of Igmentioning

confidence: 70%

P-4: Electrical Characteristics of Dual-Gate CAAC-IGZO FET with Self-Aligned Top Gate

Honda

Suzuki

Matsuda

et al. 2016

SID Symposium Digest of Technical Papers

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Section: -3 Simulation Assuming Increase In Electron Mobility Of Igmentioning

confidence: 70%

P-4: Electrical Characteristics of Dual-Gate CAAC-IGZO FET with Self-Aligned Top Gate

Honda

Suzuki

Matsuda

et al. 2016

SID Symposium Digest of Technical Papers

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“…Comsol 5.0 software is used to simulate the mechanical distribution in the TFT structure along the channel length under mechanical tensile stress, and in order to show the results clearly, the software can set the stress state to be displayed on the plane, as shown in Figure (a) and 3(b). IGZO and Mo bear more stress, due to their higher Young's moduli of 130–137 GPa and 330 GPa, respectively, compared to that of SiO x (70 GPa) and PI (3.0–3.2 GPa) . The force in the IGZO around the source/drain is larger than in the center region.…”

Section: Resultsmentioning

confidence: 99%

Effects of Mechanical Stress on Flexible Dual‐Gate a‐InGaZnO Thin‐Film Transistors

Yang

Chang

Chen

et al. 2017

Physica Status Solidi (a)

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The effects of mechanical tensile and compressive stress on dual‐gate amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) on a flexible substrate were investigated. Both the tensile and compressive stresses led to increases in free electrons and deep states in a‐IGZO. Strong tensile stress tends to form more deep defects than compressive stress, resulting in severe deterioration in performance. Small compressive stress seems to repair defects in the relatively poor quality etch‐stop layer (ESL), resulting in increased mobility in the top‐gate‐controlled performance.

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“…-Ga2O3 of crystalline Ga 2 O 3 is found to range between 9.5 and 22.5 W (m K) À1 depending on orientation (Guo et al, 2015;Handwerg et al, 2016), while for amorphous oxides and amorphous semiconductors is expected to be at least one order of magnitude smaller (Yoshikawa et al, 2013;Wingert et al, 2016). Since T NW is linear in d, but inversely proportional to , the increase in temperature can be explained by the increasing thermal resistance of the growing oxide layer.…”

Section: Discussionmentioning

confidence: 97%

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

Hassan¹,

Lähnemann²,

Davtyan³

et al. 2020

J Synchrotron Radiat

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Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, a comparison is made of nXRD experiments carried out on individual semiconductor nanowires in their as-grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the third-generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 1010 s−1, the axial lattice parameter and tilt of individual GaAs/In0.2Ga0.8As/GaAs core–shell nanowires were monitored by continuously recording reciprocal-space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology were studied by cathodoluminescence spectroscopy, energy-dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray-induced ozone reactions in air. Due to the lower heat-transfer coefficient compared with GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.

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Thermal Conductivity of Amorphous Indium–Gallium–Zinc Oxide Thin Films

Cited by 66 publications

References 22 publications

P-4: Electrical Characteristics of Dual-Gate CAAC-IGZO FET with Self-Aligned Top Gate

P-4: Electrical Characteristics of Dual-Gate CAAC-IGZO FET with Self-Aligned Top Gate

Effects of Mechanical Stress on Flexible Dual‐Gate a‐InGaZnO Thin‐Film Transistors

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

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