Thermal conductivity of silicon nitride membranes is not sensitive to stress

Ftouni, Hossein; Blanc, Christophe; Tainoff, Dimitri; Fefferman, Andrew; Defoort, Martial; Lulla, Kunal; Richard, Jacques; Collin, Eddy; Bourgeois, Olivier

doi:10.1103/physrevb.92.125439

Cited by 75 publications

(46 citation statements)

References 49 publications

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“…2A . κ mat of the 70-nm-thick bare films was 2.5 ± 0.2 W/mK, which was consistent with the previous study measured by the 3ω method ( 28 ). As shown in Fig.…”

Section: Resultssupporting

confidence: 92%

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Ultimate suppression of thermal transport in amorphous silicon nitride by phononic nanostructure

et al. 2020

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Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

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“…2A . κ mat of the 70-nm-thick bare films was 2.5 ± 0.2 W/mK, which was consistent with the previous study measured by the 3ω method ( 28 ). As shown in Fig.…”

Section: Resultssupporting

confidence: 92%

“…On the basis of this model, we have calculated the room temperature κ T of bulk a-Si 3 N 4 . The obtained value was 2.9 W/mK, which is consistent with the measured κ reported by Sultan et al ( 31 ), Zink and Hellman ( 32 ), and Ftouni et al ( 28 ). The calculated κ P and κ D were identified as 1.8 and 1.1 W/mK, respectively.…”

Section: Resultssupporting

confidence: 91%

Ultimate suppression of thermal transport in amorphous silicon nitride by phononic nanostructure

et al. 2020

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“…Thus, even if its IR absorption in the range of the amide I band is low, it is high enough to observe a specific oscillation of the Si 3 N 4 film on or outside the silicon wafer. Therefore, under IR light, the film absorbs energy, retains the heat (Ftouni et al ., ; Ftouni et al ., ), and starts to quickly expand and oscillate. The oscillation intensity increases with the laser power but is independent of laser wavenumber contrary to photothermal expansion observed for the fibres.…”

Section: Resultsmentioning

confidence: 99%

Section: Challenge Of Afm-ir Measurements On the Free-standing Si 3 Nmentioning

confidence: 99%

Correlative infrared nanospectroscopy and transmission electron microscopy to investigate nanometric amyloid fibrils: prospects and challenges

Partouche

Mathurin

Malabirade

et al. 2019

Journal of Microscopy

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Summary Propagation of structural information through conformational changes in host‐encoded amyloid proteins is at the root of many neurodegenerative disorders. Although important breakthroughs have been made in the field, fundamental issues like the 3D‐structures of the fibrils involved in some of those disorders are still to be elucidated. To better characterise those nanometric fibrils, a broad range of techniques is currently available. Nevertheless none of them is able to perform direct chemical characterisation of single protein fibrils. In this work, we propose to investigate the structure of the C‐terminal region of a bacterial protein called Hfq as a model amyloidogenic protein, using a correlative approach. The complementary techniques used are transmission electron microscopy and a newly developed infrared nanospectroscopy technique called AFM‐IR. We introduce and discuss the strategy that we have implemented as well as the protocol, challenges and difficulties encountered during this study to characterise amyloid assemblies at the nearly single‐molecule level. Lay Description Propagation of structural information through conformational changes in amyloid proteins is at the root of many neurodegenerative disorders. Amyloids are nanostructures originating from the aggregation of multiple copies of peptide or protein monomers that eventually form fibrils. Often described as being the cause for the development of various diseases, amyloid fibrils are of major significance in the public health domain. While important breakthroughs have been made in the field, fundamental issues like the 3D‐structures of the fibrils implied in some of those disorders are still to be elucidated. To better characterise these fibrils, a broad range of techniques is currently available for the detection and visualisation of amyloid nanostructures. Nevertheless none of them is able to perform direct chemical characterisation of single protein fibrils. In this work, we propose to investigate the structure of model amyloidogenic fibrils using a correlative approach. The complementary techniques used are transmission electron microscopy and a newly developed infrared nanospectroscopy technique called AFM‐IR that allows chemical characterisation at the nanometric scale. The strategy, protocol, challenges and difficulties encountered in this approach are introduced and discussed herein.

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“…This is attributed to the low thermal mass of the SiN membrane, which equilibrates with the environment temperature. Since the thermal conductivity of graphene (5000 W/mK) is higher than that of SiN (4 W/mK) 16 , 50 , the temperature response of the graphene follows the response of the SiN membrane. The response of the graphene on the SiN membrane is slower than that of one without the PDMS due to the PDMS thermal mass.…”

Section: Resultsmentioning

confidence: 99%

A patterned single layer graphene resistance temperature sensor

Davaji

Cho

Malakoutian

et al. 2017

Sci Rep

132

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Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors act as resistance temperature detectors, showing a quadratic dependence of resistance on the temperature in a range between 283 K and 303 K. The observed resistance change of the graphene temperature sensors are explained by the temperature dependent electron mobility relationship (~T−4) and electron-phonon scattering. By analyzing the transient response of the SLG temperature sensors on different substrates, it is found that the graphene sensor on the SiN membrane shows the highest sensitivity due to low thermal mass, while the sensor on SiO2/Si reveals the lowest one. Also, the graphene on the SiN membrane reveals not only the fastest response, but also better mechanical stability compared to the suspended graphene sensor. Therefore, the presented results show that the temperature sensors based on SLG with an extremely low thermal mass can be used in various applications requiring high sensitivity and fast operation.

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Thermal conductivity of silicon nitride membranes is not sensitive to stress

Cited by 75 publications

References 49 publications

Ultimate suppression of thermal transport in amorphous silicon nitride by phononic nanostructure

Ultimate suppression of thermal transport in amorphous silicon nitride by phononic nanostructure

Correlative infrared nanospectroscopy and transmission electron microscopy to investigate nanometric amyloid fibrils: prospects and challenges

A patterned single layer graphene resistance temperature sensor

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