1999
DOI: 10.1109/63.750185
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Thermal modeling and experimentation to determine maximum power capability of SCR's and thyristors

Abstract: This paper develops and explores a new thyristor thermal model that accounts for the temperature-dependent nature of the device material and construction. The model iteratively calculates temperature rise of a thyristor under arbitrary pulse conditions. The model is then correlated to an experiment that places a silicon-controlled rectifier (SCR) in a controlled test circuit at room and cryogenic temperatures. The knowledge gained from the thermal model and correlative experiment will allow the circuit designe… Show more

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Cited by 14 publications
(6 citation statements)
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“…The results vary depending on dimensions and manufacturing process of the silicon sample as well as on the measurement method. Comparing results of [6], [8] and [9], in general, one may expect that thin silicon layers have a different thermal conductivity than bulk crystalline silicon. Whether the thermal material model of bulk silicon is valid for power semiconductors with a die thickness of about 200 µm is investigated in this paper.…”
Section: Modeling Of Silicon Thermal Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…The results vary depending on dimensions and manufacturing process of the silicon sample as well as on the measurement method. Comparing results of [6], [8] and [9], in general, one may expect that thin silicon layers have a different thermal conductivity than bulk crystalline silicon. Whether the thermal material model of bulk silicon is valid for power semiconductors with a die thickness of about 200 µm is investigated in this paper.…”
Section: Modeling Of Silicon Thermal Propertiesmentioning
confidence: 99%
“…The bulk silicon thermal material properties can be described piecewise by empirical functions based on measurements presented in [10] and having e.g. the following form [6]:…”
Section: Modeling Of Silicon Thermal Propertiesmentioning
confidence: 99%
“…A current challenge for the ECD method includes a higher level of excitation current capability required by the thyristors (static exciter). However, cyclic overloading of thyristors is possible because they are typically over-rated [32]. To further improve the system security, temperature monitoring of thyristors, transformers, and supplying power cables would be an advantage when the machine is operated in extreme modes of over-excitation.…”
Section: Case 2 -Multiple Contingencymentioning
confidence: 99%
“…Thermal material properties are taken from manufacturers' datasheets for every modeled part respectively. Thermal material properties of the silicon chip are modeled as temperature dependent according to the material models presented in [4], which we have validated for simulations of Smart Power Switches in [5]. …”
Section: B Sps Device and Its Fem Modelmentioning
confidence: 99%