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This paper develops and explores a new thyristor thermal model that accounts for the temperature-dependent nature of the device material and construction. The model iteratively calculates temperature rise of a thyristor under arbitrary pulse conditions. The model is then correlated to an experiment that places a silicon-controlled rectifier (SCR) in a controlled test circuit at room and cryogenic temperatures. The knowledge gained from the thermal model and correlative experiment will allow the circuit designer to maximize thyristor capability in pulsed power applications. The increased power capability of operating a thyristor at cryogenic temperature is also examined.

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