Thermal neutron dosimetry using MOSFET dosemeters

Fragopoulou, M.; Siskos, S.; Manolopoulou, M.; Zamani, M.; Sarrabayrouse, G.

doi:10.1016/j.radmeas.2009.10.082

Cited by 6 publications

(4 citation statements)

References 14 publications

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“…Its value was found to be 1.58 mV/mSv (8.13 mV/mGy), much higher than their response to intermediate-fast neutrons which is 0.017 mV/mSv (0.22 mV/mGy). These values show that the response of the MOSFETs was improved compared to the response obtained in previous studies in which LiF powder was deposited on the gate surface [13]. This response is also higher 5 than previously reported in the literature with different neutron converters such as Gd in which the sensitivity to thermal neutrons was found to be 1.5-.1.6 mV/mGy [7].…”

Section: Resultsmentioning

confidence: 42%

High sensitive depleted MOSFET-based neutron dosimetry

Fragopoulou¹,

Konstantakos²,

Zamani³

et al. 2019

hnps

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A new dosemeter based on a depleted Metal-Oxide-Semiconductor field effect transistor, sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse France. In order to be used for neutron dosimetry a thin film of lithium fluoride was deposited on the surface of the gate of the device. The characteristics of the dosemeter such as its response to neutron dose were investigated. The response in thermal neutrons was found to be high. In fast neutrons the response was lower than that of thermal neutrons but higher than the one presented in literature.

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Section: Resultsmentioning

confidence: 42%

High sensitive depleted MOSFET-based neutron dosimetry

Fragopoulou¹,

Konstantakos²,

Zamani³

et al. 2019

hnps

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“…The trapped charges affect the gate voltage by reordering of charges. The measurement of the shift of the threshold voltage is proportional to the absorbed dose [1,5,6,8]. The threshold voltage shift, ΔV T , which is the measured quantity, depends upon: a) the incident particle type and energy (dE/dx) b) the ionizing particle penetration into the oxide c) the absorbed dose, D, d) the gate bias during irradiation and e) the gate insulator thickness.…”

Section: Resultsmentioning

confidence: 99%

“…For this exposure mode, usually called zero bias mode, the expected response of the voltage shift ΔVT can be expressed in the form [1,6,8]:…”

Section: Resultsmentioning

confidence: 99%

A study of the response of depleted type p-MOSFETs to electron dose

Fragopoulou

Stoulos

Zamani

et al. 2019

hnps

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The p-MOSFET dosimeter studied in this work has been manufactured at LAAS- CNRS Laboratory in Toulouse France, for applications in personal and space dosimetry. They are proposed for proton, heavy ions and electron and photon dose measurements. The current study investigates the sensitivity of this new type of Metal-Oxide-Semiconductor field effect transistor (MOSFET) to electrons. The sensitivity of the new MOSFET based dosemeters to electrons is linear for wide dose ranges. The influence of the electrons energy on the dosemeters response is also investigated.

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“…Step 1: Fabrication of RF MOSFET Device Similar size MOS capacitors were fabricated on a 4 inch diameter and 800 μm thick n-type silicon wafer and the grown layers were characterized by C-V, C-F and sheet resistance measurements [20][21][22]. To fabricate metal-oxide-semiconductor, the silicon wafers were cleaned by following the standard cleaning procedure to remove insoluble organics and metallic contaminants.…”

Section: Process For Measurements Of Device Parametersmentioning

confidence: 99%

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Srivastava¹,

Yadav²,

Singh³

2011

IJCNS

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To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to -5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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Thermal neutron dosimetry using MOSFET dosemeters

Cited by 6 publications

References 14 publications

High sensitive depleted MOSFET-based neutron dosimetry

High sensitive depleted MOSFET-based neutron dosimetry

A study of the response of depleted type p-MOSFETs to electron dose

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

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