Thermal Properties of Cr- and Ni- Silicide Thin Films

Abstract

New types of functional thin films of Cr-Si and Ni-Si were fabricated for heating element applications. In order to reduce the problem of large variations of electrical resistance of heating elements during the semiconductor thermal processing, we attempt to minimize temperature coefficient of resistance (TCR) of the heating material by mixing the semiconductor and metallic materials. As the heating elements, two different multi-layered structures were prepared by RF magnetron sputtering technology; Cr-Si and Ni-Si structures on top of Al 2 O 3 substrates. The thickness of the Cr-Si and Ni-Si films ranged up to a couple of micron, and a post annealing at 750°C was carried out to achieve more reliable film structures. The electrical and thermodynamic properties of the thin films were measured up to the temperature of 500°C. Chrome-rich films show the metallic properties, whereas silicon-rich films do the semiconductor properties in measurements of TCR. Optimal composition between chrome and silicon has been obtained as 2:1 in the Auger electron spectroscopy analysis. TCR for the sample was estimated as about +0.0003/°C -1 , which is fairly low value when considering the conventional heating elements.

Filling of Very Fine Via Holes for Three-Dimensional Packaging by Using Ionized Metal Plasma Sputtering and Electroplating

“…The seed layer formation methods that have been employed for TSV filling are normally either sputtering or chemical vapor deposition (CVD). [1][2][3][4][5][6][7][8] Sputtering is preferred to CVD because it is more cost-effective. However, sputterdeposited films suffer from very poor conformality inside via holes especially with high aspect ratios (ARs).…”

“…More detailed electroplating conditions can be found in our previous study. 8) In the IMP sputtering system, many gas ions are produced by ICP and they are accelerated towards the substrate due to the negative sheath potential generated near the substrate surface. The energy of gas ions incident on the substrate during the IMP Cu deposition process was measured by using a quadrupole mass spectrometer and represented in Fig.…”