Monolayer MoS 2 and few-layer MoS 2 have been widely studied fundamentally, and for application purposes, however, less investigated bilayer or trilayer MoS 2 may demonstrate properties at the interface of monolayer and fewlayer MoS 2 . Here, we study the physical properties of bilayer MoS 2 with a triangular shape, prepared over a SiO 2 /Si substrate via a chemical vapor deposition method. We analyze the thermal sensitive quantum confinement behavior of bilayer MoS 2 by a temperature-dependent photoluminescence study to understand its semiconducting nature. We also examine the phonon confinement behavior and its thermal response for bilayer MoS 2 , which can play a key role in the performance and thermal management of MoS 2based optoelectronic devices. The optothermal Raman technique has been used to measure the thermal behavior of the prepared MoS 2 over the SiO 2 /Si substrate. We obtain interfacial thermal conductance and thermal conductivity at room temperature for supported bilayer MoS 2 to be around 1.264 ± 0.128 MW m −2 K −1 and 42 ± 8 W m −1 K −1 , respectively, suggesting its suitability for thermal management in optoelectronic devices.