Thermal simulations of packaged IR LED arrays

Abstract

The steady-state and transient behaviors of packaged IR LED arrays have been studied via numerical simulations. The waste heat generated by LEDs must be removed through a cold plate or a cryogenic cold finger attached to the backside of the driver array. Therefore, this heat must travel across the LED array-driver interface and through the driver array. The modeling results demonstrate that the thermal resistance of these components can be significant. The steady-state temperature profiles across several configurations are used to identify the thermal bottlenecks. Transient simulations are used to quantify the rise and fall times of the IR LEDs, and the fall times can be significantly reduced by changes in the LED layout. These proposed guidelines to minimize thermal issues in LED arrays should result in better performing and more reliable IR LED arrays.

Об Использовании Арсенида Индия В Качестве Материала Волновода При Измерениях Методом Нарушенного Полного Внутреннего Отражения

“…С увеличением тока СД (0−50 mА) динамическое сопротивление в нуле смещения R 0 в ФД уменьшалось с 3.9 k (0.19 • cm 2 ) до 3.6 k (0.17 • cm 2 ), отражая, очевидно, некоторый разогрев всего чипа при выделении джоулева тепла (см. обсуждение вопросов джоулева разогрева в гетероструктурах, в которых p−n переход удален от теплоотвода из-за относительно толстой подложки InAs [12] или приближен к нему в образцах типа флип-чип [12,13] Рис. 2.…”

A Modular Platform for Rapid IRSP Development

“…The dewar houses the hybrid. As noted in [11], IRLEDs will generate waste heat which must be removed to maintain good performance, as electro-optical efficiency of the IRLEDs decreases as their temperature increases. For tests requiring cryogenic temperatures, the dewar is filled with liquid nitrogen to cool the array to 77 K [19].…”

“…Historically, resistive arrays have been limited to simulating temperatures of around 700 K, and too low frame rates due to the device rise-time [10], [11]. Current research by Santa Barbara Infrared aims to overcome these barriers and reach frame rates up to 500 Hz and apparent temperatures over 1500 K. Results reported thus far are promising [12].…”

On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)

“…The study of current heating of semiconductor p−n structures is of undoubted interest both in the creation and use of high-power switches and (traditional) LEDs, and for research and development of new approaches to heat removal from working electronic components, for example, through radiation or thermoelectric cooling [1][2][3]. In addition, there are a number of tasks that require analysis of the temperature distribution in multi-element devices, where the spreading of heat from a working element with a p−n junction changes the conditions for the operation of neighboring elements [4][5][6][7].…”