Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

Applied Physics Letters

Kwak

1995

Section: Comparison Of High Temperature Thermal Stabilities Of Ru Andmentioning

confidence: 98%

Comparison of high temperature thermal stabilities of Ru and RuO2 Schottky contacts to GaAs

Kim

Applied Physics Letters

Kwak

1995

“…Iridium ͑Ir͒ and ruthenium ͑Ru͒ have a high work function ͑Ir: 5.6 eV, Ru: 5.4 eV͒, a high melting point ͑ϳ2400°C͒, 18 higher resistance to chemical reactions, 19 and a very limited solid solubility in other metals. [21][22][23][24][25] Iridium oxide (IrO 2 ) and the ruthenium oxide (RuO 2 ) are conducting metal oxides with rutile-type structure. [21][22][23][24][25] Iridium oxide (IrO 2 ) and the ruthenium oxide (RuO 2 ) are conducting metal oxides with rutile-type structure.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Schottky contacts on n-type 4H–SiC using IrO2 and RuO2

Han

Journal of Applied Physics

2003

Thermally stable Schottky contacts on n-type 4H-SiC with high Schottky barrier height were demonstrated by annealing the rare earth metal contacts ͑Ir and Ru͒ under O 2 ambient. The formation of rare earth metal oxides (IrO 2 and RuO 2 ) after O 2 annealing led to the increase of Schottky barrier height ͑Ͼ1.9 eV͒ and a low reverse leakage current (ϳ10 Ϫ9 A/cm 2 ). Synchrotron radiation photoemission spectroscopy showed that the work function of IrO 2 is higher about 0.23 eV than that of Ir and the binding energies of Si 2p and C 1s shifted toward lower binding energies by 0.12 eV in both O 2 and N 2 annealed samples. The oxidation annealing caused predominant Si outdiffusion to the IrO 2 (RuO 2 ), leaving Si vacancies behind, leading to the shift of surface Fermi level to the energy level of Si vacancy. Both the formation of oxide and the Fermi level movement played a role in forming the Schottky contact with high barrier height and excellent thermally stability.

“…1 Bulk TiO 2 is well known to exist in three main phases: rutile, anatase, and brookite. 4 The growth of TiN films produced by magnetron sputtering display a strong dependence of process parameters, for example, the bias voltage on the substrate and the nitrogen flow influence both the film stoichiometry and structure. 2 Titanium nitride ͑TiN͒ is a hard coating material with many commercial applications related to its high melting point, high hardness, and excellent corrosion resistance.…”

Section: Introductionmentioning

confidence: 99%

High-rate and low-temperature synthesis of TiO2, TiN, and TiO2∕TiN∕TiO2 thin films and study of their optical and interfacial characteristics

Jung

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Han

et al. 2005

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