1998
DOI: 10.1134/1.1130509
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Thermal stability of submicrocrystalline copper strengthened with HfO2 nanoparticles in the temperature range 20–500 °C

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Cited by 4 publications
(2 citation statements)
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“…In the last years, the hafnium oxide (HfO 2 ) has been extensively investigated as an alternative material to replace the silicon dioxide employed in gate dielectric systems of microelectronic devices [ 5 - 9 ]. Moreover, this material has a wide potential for the fabrication of complementary metal–oxide–silicon transistors with small dimensions and/or liquid crystals because of its high-K dielectric constant, relatively low leakage current, wide band gap (5.70 eV), good thermal stability, and high transparency [ 10 - 15 ]. Recently, different nano-sized particle materials (gold, cobalt, platinum, and germanium) have been embedded into the HfO 2 matrix to improve the interfacial and electrical properties of metal–oxide–semiconductor capacitors [ 16 - 19 ].…”
Section: Introductionmentioning
confidence: 99%
“…In the last years, the hafnium oxide (HfO 2 ) has been extensively investigated as an alternative material to replace the silicon dioxide employed in gate dielectric systems of microelectronic devices [ 5 - 9 ]. Moreover, this material has a wide potential for the fabrication of complementary metal–oxide–silicon transistors with small dimensions and/or liquid crystals because of its high-K dielectric constant, relatively low leakage current, wide band gap (5.70 eV), good thermal stability, and high transparency [ 10 - 15 ]. Recently, different nano-sized particle materials (gold, cobalt, platinum, and germanium) have been embedded into the HfO 2 matrix to improve the interfacial and electrical properties of metal–oxide–semiconductor capacitors [ 16 - 19 ].…”
Section: Introductionmentioning
confidence: 99%
“…Deformation and fracture of perfect dislocation-free crystals depends on a density of point defects in the material. For example, annealing polycrystalline Cu with a grain size of 200 nm or less at 200 °С or higher results in a 10 -20 % change of the Young's modulus due to the change in the density of vacancies in the Cu grains [45]. At equilibrium, the density of intrinsic point defects in a single crystal is proportional to…”
Section: Resultsmentioning
confidence: 99%