2007
DOI: 10.1063/1.2803727
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Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon

Abstract: Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers J. Appl. Phys. 112, 054508 (2012) Dielectric elastomer actuators with elastomeric electrodes Appl. Phys. Lett. 101, 091907 (2012) Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition J. Appl. Phys. 112, 044105 (2012) Relationship between dielectric coefficient and Urbach tail width of hydrogenated amo… Show more

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Cited by 21 publications
(12 citation statements)
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“…Aluminum oxide grows in the form of wire-like structures with heights of ≈ 50 nm, representing an ideal ALD growth mode with a rate of about 1Å per cycle in vertical direction, in good agreement with the growth rate we previously determined for ALD on Si by ellipsometry [10]. In Ref.…”
supporting
confidence: 70%
“…Aluminum oxide grows in the form of wire-like structures with heights of ≈ 50 nm, representing an ideal ALD growth mode with a rate of about 1Å per cycle in vertical direction, in good agreement with the growth rate we previously determined for ALD on Si by ellipsometry [10]. In Ref.…”
supporting
confidence: 70%
“…32,33 The calculations in systems containing 3 and 5 vol.% of SiC yielded similar results. When atmosphere produced by the powder bed (mixture of Al 2 O 3 , SiC and C), instead of Ar, was used in the calculation, formation of significant amount of gasses CO, SiO and Al 2 O (predominantly CO) effectively suppress above described reactions.…”
Section: Thermodynamic Analysis Of the Systemsupporting
confidence: 76%
“…In order to suppress or clean the oxide of Ge and germanate on Ge surface, various surface passivation methods have been applied, such as S-passivation [5] , N-passivation [6] , thermal/ozone oxidation [7] , and introduction of buffer layer [8][9][10] .…”
Section: Introductionmentioning
confidence: 99%