2017
DOI: 10.1016/j.jnucmat.2016.12.009
|View full text |Cite
|
Sign up to set email alerts
|

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

3
16
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 22 publications
(19 citation statements)
references
References 27 publications
3
16
0
Order By: Relevance
“…The binding energies of W4f7/2 and W4f5/2 peaks at 35.6 eV and 37.8 eV are assigned to the W-O state [30]. Fig 2(c) displays that the binding energies of N1s peaked at 396.9 eV, 397.7 eV and 399.8 eV, which can be assign to Cr-N and W-N binding states, respectively [25,28]. The O1s spectrum in Fig.…”
Section: Resultsmentioning
confidence: 94%
See 2 more Smart Citations
“…The binding energies of W4f7/2 and W4f5/2 peaks at 35.6 eV and 37.8 eV are assigned to the W-O state [30]. Fig 2(c) displays that the binding energies of N1s peaked at 396.9 eV, 397.7 eV and 399.8 eV, which can be assign to Cr-N and W-N binding states, respectively [25,28]. The O1s spectrum in Fig.…”
Section: Resultsmentioning
confidence: 94%
“…The binding energies of W4f 7/2 and W4f 5/2 peaks at 35.6 eV and 37.8 eV are assigned to the W-O state [30]. Figure 2c displays that the binding energies of N1s peaked at 396.9 eV, 397.7 eV and 399.8 eV, which can be assign to Cr-N and W-N binding states, respectively [25,28]. The O1s spectrum in Figure 2d shows that the binding energies of the O1s peaked at 530.1, 530.7 and 531.8 eV, which can be assign to Cr-O, W-O and H-O states, respectively [31][32][33].…”
Section: Resultsmentioning
confidence: 95%
See 1 more Smart Citation
“…That made it a candidate for many potential applications such as Cu diffusion barrier into Si in semiconductor applications [3], wear resistance protective coatings on mechanical components [4], catalyst for nitrogen monoxide dissociation and reduction with hydrogen [5], photoelectrochemical hydrogen production [6] or deuterium diffusion barrier for plasma-facing components in nuclear fusion devices [7]. W N x thin films have frequently been prepared by reactive magnetron sputtering [4,7,8,9,10,11,12]. The formation of W N x is thermodynamically unfavorable, especially at atmospheric pressure.…”
Section: Introductionmentioning
confidence: 99%
“…Although thermodynamical predictions reported a thermal stability of W 2 N up to 2100 K [13], experimental investigations resulted in much lower N 2 release temperatures [10,11,12]. Shen et al [12] reported N 2 release for their films starting at about 1090 K and being fully released at 1170 K. W :N films deposited by Gao et al [11] showed an onset of N 2 desorption at 850 to 900 K and a release peak at 960 to 970 K. Finally, Zhang et al [10] reported an onset of N 2 release of their magnetron-sputter-deposited W 2 N layers at about 600 K continuously increasing and reaching a maximum release rate at about 1200 K. For higher temperatures the release rate dropped strongly to very low values. Obviously the layer decomposed at 1200 K. Furthermore, a dramatic degradation of the layers properties happened at temperatures of about 900 K [4].…”
Section: Introductionmentioning
confidence: 99%