Thermally Stimulated Conductivity and Luminescence in Polycrystalline Diamond Films

Gheeraert, Etienne; Deneuville, A.; Gonon, P.; Benabdesselam, Mourad; Iacconi, P.

doi:10.1002/(sici)1521-396x(199903)172:1<183::aid-pssa183>3.0.co;2-r

Cited by 23 publications

(3 citation statements)

References 9 publications

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“…Thus, the SiV 2 :H(−) defect is the best candidate for the 1.018-eV absorption center among the considered Si-related defects. The vibration mode shifts downward successively by 3.1 cm −1 when 28 Si is replaced by 29 Si that is again replaced by 30 Si. Thus, optical measurement may directly identify the chemical composition of the 1.018-eV absorption center.…”

Section: Origin Of the 1018-ev Absorption Center And Its Potentimentioning

confidence: 99%

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Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study

Thiering

Gali

2015

Phys. Rev. B

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Paramagnetic luminescent point defects in diamond are increasingly important candidates for quantum information processing applications. Recently, the coherent manipulation of single silicon-vacancy defect spins has been demonstrated in chemical vapor deposited diamond samples where silicon may be introduced as a contamination in the growth process. Hydrogen impurity may simultaneously enter diamond too and form complexes with silicon-vacancy defects. However, relatively little is known about these complexes in diamond.Here we report plane-wave supercell density functional theory results on various complexes of silicon vacancy and hydrogen in diamond. We found a family of complexes of silicon, vacancies, and hydrogen atoms that are thermally stable in diamond with relatively low formation energies that might form yet unobserved or unidentified silicon-related defects. These complexes often show infrared optical transitions and are paramagnetic. We tentatively assign one of these complexes to a recently reported but yet unidentified infrared absorber center. We show that this center has a metastable triplet state and might exhibit a spin-selective decay to the ground state, thus it is an interesting candidate for quantum information processing applications. We also discuss here methodology aspects of calculating hyperfine parameters and intradefect level excitations in systems with notoriously complex electron states within hybrid density functional approach. We also demonstrate that a simplified approach using ab initio data can be very powerful to predict the relative intensities of the phonon replica associated with quasilocal vibration modes in the photoexcitation spectrum.

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Section: Origin Of the 1018-ev Absorption Center And Its Potentimentioning

confidence: 99%

“…Since the 1.018-eV absorption line was found in silicon contaminated CVD diamond it might be associated with an unidentified silicon-related defect. This absorption center might be related to a ∼0.92-1.05-eV thermoluminescence center in CVD diamond film grown on Si substrate that was cleaned by hydrogen plasma [28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study

Thiering

Gali

2015

Phys. Rev. B

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“…[7][8][9] Complementary information about the trap dynamics was obtained using the thermally stimulated current ͑TSC͒ technique. [10][11][12] The dramatic effect of temperature on the charge collection efficiency is shown by the IBIC images in Fig. 1 which were taken in a planar geometry for both positive and negative biases.…”

mentioning

confidence: 99%

Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond

Hearne

Jamieson

Trajkov

et al. 2004

Applied Physics Letters

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We have used the technique of ion beam induced charge with a 2 MeV He+ microprobe to image particle detectors fabricated from polycrystalline chemical vapor deposited diamond as a function of temperature. We find that detectors which display a thermally stimulated current peak at 190 °C display increased charge collection efficiency when heated above that temperature. The probability of detecting the impact of a single ion at room temperature was less than 2%, but this probability rises to over 80% at 170 °C. We model this effect by showing that charge trapped at grain boundaries is liberated at elevated temperatures and this results in an increased electric field within the detector volume and hence a raised charge collection efficiency.

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Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

et al. 2014

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Thermally Stimulated Conductivity and Luminescence in Polycrystalline Diamond Films

Cited by 23 publications

References 9 publications

Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study

Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study

Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond

Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

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