Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

Dielectric Properties of Pure and Gd‐Doped HfO2 Ceramics

“…It was revealed that oxygen vacancies are the decisive fact in controlling the electric and dielectric properties of HfO 2. In contrast to the abundant theoretical results, experimental investigations were solely focused on the thin film case . Ferroelectricity had been widely reported recently in HfO 2 thin films via slightly doping with different cations such as Gd, Al, Y, and Si .…”

“…[6][7][8] In contrast to the abundant theoretical results, experimental investigations were solely focused on the thin film case. [9][10][11][12][13][14][15] Ferroelectricity had been widely reported recently in HfO 2 thin films via slightly doping with different cations such as Gd, Al, Y, and Si. [16][17][18][19][20] This result is quite astonishing because ferroelectricity is physically prohibited in bulk HfO 2 as it exhibits a centrosymmetrically monoclinic structure at room temperature.…”

High-Performance MIM Capacitors for a Secondary Power Supply Application

“…For the dissipation factor, it is observed from Figure 3 that capacitors A and B present a decline from 0.107 to 0.023 and from 0.075 to 0.017 towards a higher frequency, and have a minimum average value 0.047 and 0.033 in the frequency range of 1 kHz to 10 kHz, respectively. The dispersion of dielectric loss can be calculated by the following equation [8,21]:$G_s=D\omega C_s$ where G s , C S , and D are the conductance, series capacitance, and dissipation factor, respectively, and ω equals 2π f . As can be seen, the dissipation factor decreases with increasing frequency and is frequency-dependent.…”

“…Metal-Insulator-Metal (MIM) capacitors, which are typical passive components, have been widely used for radio-frequency decoupling and analog mixed signal integrated circuits applications [1,2,3,4,5,6,7,8] due to their low parasitic capacitance and low resistivity electrode [6,9]. Also, MIM capacitors are attractive energy storage devices and can act as a secondary power supply due to the excellent advantage of their rapid-moving charge and high burst power [10].…”

“…Concerning this, many researchers have made much effort to fabricate three-dimensional (3D) structures by anodic aluminum oxide macro-holes [10] or silicon micro-holes [13], in which large areal MIM layers are grown. So far, more attention has been paid to high- k dielectrics, including HfO 2 [1,8], Al 2 O 3 [2,14], TaYO x [3], ZrO 2 [4], Lu 2 O 3 [6], and Eu 2 O 3 [15] and their combinations, such as sandwiched [9,16], stacked [5,7], and laminate structures [17,18], based on the substrate areas of within the millimeter scale in the past few years. Currently, most of the 3D MIM capacitors are being used for dynamic random access memory.…”