1978
DOI: 10.1016/0364-5916(78)90008-1
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Thermodynamic analysis of the GaIn, AlGa, AlIn and the AlGaIn systems

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Cited by 45 publications
(7 citation statements)
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“…Since the first phase equilibria study on the In-Ga system by Biosbaudran in 1885 [27] and the complete liquidus measurements of the system by French et al in 1937 [28], the system has been critically assessed several times [12,29,30,31,32,33]. Rugg and Chart [32] and Anderson and Ansara [12] thoroughly assessed the system using available liquidus data, enthalpies of mixing, activity measurements and new unary data at about the same time to provide a complete and simple thermodynamic description of the system.…”
Section: In-gamentioning
confidence: 99%
“…Since the first phase equilibria study on the In-Ga system by Biosbaudran in 1885 [27] and the complete liquidus measurements of the system by French et al in 1937 [28], the system has been critically assessed several times [12,29,30,31,32,33]. Rugg and Chart [32] and Anderson and Ansara [12] thoroughly assessed the system using available liquidus data, enthalpies of mixing, activity measurements and new unary data at about the same time to provide a complete and simple thermodynamic description of the system.…”
Section: In-gamentioning
confidence: 99%
“…An ELM-resolved power balance ΔW target = ΔW plasma + ΔW in − ΔW rad where ΔW target = W ELM(IR) 2πRdt with dt = 1.3 ms (the averaged ELM duration), W ELM(IR) = 58 880 (green in figure 7(a)), ΔW in = 4.8 kJ and ΔW rad = 5 kJ (averaged over 5 ms), gives a deposited energy of ∼75 kJ. The discrepancy with the average ΔW ELM (∼60 kJ), or 20%, is within the data scatter of the IRTV, the diamagnetic measurement and observed ELM [4,50] heat deposition toroidal asymmetries [28,51].…”
Section: Heat Flux Footprintsmentioning
confidence: 59%
“…On the other hand, the heat of solution for the solid solution of Ga + Au → Au [Ga] is negative. 16 Therefore, the dissolution of Ga in the Au-Ni solid solution, as shown in Fig. 2a mainly contributed to reduce the contact resistivity through the increase of net concentration of V Ga below the contact during annealing.…”
Section: Resultsmentioning
confidence: 98%