Thermodynamic evaluation of the In–Sn–O system

Isomäki, Iikka; Hämäläinen, Marko; Gierlotka, Wojciech; Onderka, B.; Fitzner, K.

doi:10.1016/j.jallcom.2005.11.083

Cited by 26 publications

(12 citation statements)

References 5 publications

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“…Sample C, with a measured In/(In + Sn) ratio of 21%, showed a tetragonal SnO 2 structure and a crystallite size of 6.4 nm as calculated from the Scherrer equation using the <101> peak. In contrast, samples D and E remained amorphous after annealing at 500˝C, which is consistent with results in a previous study by Isomäki et al [23]. Table 2.…”

Section: Film Characterization: Datasupporting

confidence: 91%

Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

et al. 2016

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Abstract:Reactive dual-target DC magnetron sputtering was used to prepare In-Sn oxide thin films with a wide range of compositions. The films were subjected to annealing post-treatment at 400˝C or 500˝C for different periods of time. Compositional and structural characterizations were performed by X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, Rutherford backscattering and scanning electron microscopy. Films were investigated for gas sensing at 200˝C by measuring their resistance response upon exposure to acetaldehyde mixed with synthetic air. We found that the relative indium-to-tin content was very important and that measurable sensor responses could be recorded at acetaldehyde concentrations down to 200 ppb, with small resistance drift between repeated exposures, for both crystalline SnO 2 -like films and for amorphous films consisting of about equal amounts of In and Sn. We also demonstrated that it is not possible to prepare crystalline sensors with intermediate indium-to-tin compositions by sputter deposition and post-annealing up to 500˝C.

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Section: Film Characterization: Datasupporting

confidence: 91%

Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

et al. 2016

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“…Moreover, as it was shown earlier [8], the small range of the solubility of SnO 2 in In 2 O 3 exists with the saturation limit x SnO 2 ffi 0:1. Consequently, the experiments were conducted in the following way: for all three cross-sections (x Cu /x Sn = 3/1; 1/1, 1/3) they started with the alloy composition x In = 0.8 and pure In 2 O 3 at the working electrode.…”

Section: Theory and Calculationssupporting

confidence: 60%

“…Moreover, since solid SnO 2 exhibits limited solubility range in indium sesquioxide, some alloy compositions remain in equilibrium with that solid solution. In our paper we assumed the composition of this solid solution to be constant ðx SnO 2 ¼ 0:07Þ, which is close to the saturation limit [8]. No doubt, the real situation is different since the tie-lines must emanate from the whole range of compositions of this solid solution.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamic properties of liquid copper–indium–tin alloys determined from e.m.f. measurements

Jendrzejczyk-Handzlik¹,

Gierlotka²,

Fitzner³

2009

The Journal of Chemical Thermodynamics

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“…Our experiments clearly evidences that the melting point or nearly‐stoichiometric SnO 2 (if exists) well exceeds 2100 °C. This is in contrast to values occasionally quoted in the literature of e.g ., 1630 °C . In fact, thermodynamic calculations (with use of the FactSage software) as shown in Table revealed that the minimum oxygen partial pressure (

p_{{normalO}_{2}}

) required for stabilization of SnO 2 is about 500 times higher than that required for stabilization of ZnO, which is considered to be almost the limit for melt growth techniques.…”

Section: Thermodynamicsmentioning

confidence: 99%

Growth, characterization, and properties of bulk SnO₂ single crystals

Galazka

Uecker

Klimm

et al. 2013

Physica Status Solidi (a)

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SnO2 is a semiconductor with a wide optical bandgap (3.5 eV), which makes it an attractive transparent semiconducting oxide (TSO) for electronic and opto‐electronic applications. At elevated temperatures it is, however, much more unstable than other TSOs (such as ZnO, Ga2O3, or In2O3). This leads to a rapid decomposition even under very high oxygen pressures. Our experiments showed that stoichiometric SnO2 does not melt up to 2100 °C, in contradiction to earlier published data. Bulk SnO2 single crystals, that could provide substrates for epitaxial growth, have not been reported so far. Hereby we report on truly bulk SnO2 single crystals of 1 inch diameter grown by physical vapor transport (PVT). The most volatile species during SnO2 decomposition is, in addition to oxygen, SnO, which is stable in the gas phase at high temperature and reacts again with oxygen at lower temperatures to form SnO2. We identified a relatively narrow temperature window, temperature gradients and a ratio of SnO/O2 for providing the best conditions for SnO2 single crystal growth. X‐ray powder diffraction (XRD) proved the single SnO2 phase. Moreover, by selecting a suitable SnO/O2 ratio it was possible to obtain either n‐type conductivity with electron concentrations up to 2 × 1018 cm−3 and electron mobilities up to 200 cm2 V−1 s−1, or insulating behavior. The crystals exhibited an optical absorption edge located at 330–355 nm, depending on the crystal orientation, and a good transparency over visible and near infrared (NIR) spectra.

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Thermodynamic evaluation of the In–Sn–O system

Cited by 26 publications

References 5 publications

Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

Thermodynamic properties of liquid copper–indium–tin alloys determined from e.m.f. measurements

Growth, characterization, and properties of bulk SnO₂ single crystals

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Thermodynamic evaluation of the In–Sn–O system

Cited by 26 publications

References 5 publications

Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

Thermodynamic properties of liquid copper–indium–tin alloys determined from e.m.f. measurements

Growth, characterization, and properties of bulk SnO2 single crystals

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Growth, characterization, and properties of bulk SnO₂ single crystals