Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T.; Gao, Bing; Mercier, F.; Nishizawa, S.; Nakano, Satoshi; Kangawa, Yoshihiro; Kakimoto, Koichi

doi:10.1016/j.jcrysgro.2012.01.023

Cited by 21 publications

(25 citation statements)

References 19 publications

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“…where Q eddy is induction heating source term in the graphite crucible; Q IF is heating source term acting on cell interfaces, such as radiation and convection heat exchange (Q insu ) on felt walls, radiation heat exchange (Q rad ) on growth chamber walls. Equations (1) and (2) are discretized by the finite volume method, and solved by the SIMPLE algorithm.…”

Section: Modeling Of Induction Heating and Heat Transfermentioning

confidence: 99%

“…Silicon carbide crystal (SiC) crystals are used to product semiconductor devices under higher-temperature, higher-frequency, and higher-power conditions [1]. Compared with silicon, silicon carbide crystal has better performance on chemical and thermal properties, such as higher thermal conductivity, chemical stability, radiation stability, and mechanical stability [2].…”

Section: Introductionmentioning

confidence: 99%

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Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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Three-dimensional numerical simulation platform for silicon carbide crystal growth furnace was established using C programing language, where a physical model of the furnace was built based on cylindrical coordinates; governing equations for electromagnetic and temperature fields were discretized by finite volume method; radiation characteristics were studied with the help of S2S model (surface to surface radiation model); and the least distance method was proposed to check radiation faces visibility efficiently. LU decomposition algorithm based on graphic processing unit (GPU) technology was developed to accelerate the solving process of surface to surface radiation. Then the radiation heat transfer in silicon carbide crystal (SiC) growth chamber and temperature field of silicon carbide growth furnace were studied quantificationally at I = 1250 A and F = 16 kHz. The effects of coil structures (axisymmetric and spiral) on temperature field and its gradient distributions were investigated by standard deviation method. The simulation results demonstrate that spiral electromagnetic coil generates non-axisymmetric temperature field easily; the radiation heat flux is 10 2~1 0 3 times more than conduction heat flux, radiation heat transfer is helpful to increase temperature evenness; the spiral temperature field on the SiC crystal cross-section reduces the poor homogeneity of temperature gradient, which will cause crystal to generate large defects.

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Section: Modeling Of Induction Heating and Heat Transfermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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“…Additionally, it is very difficult to obtain high-density SiC ceramics without sintering additives, due to the covalent nature of the Si-C bonding and the low selfdiffusion coefficient [15,16]. Lately, Dai's group reported a novel physical vapour deposition (PVT) method for the preparation of pure SiC ceramics.…”

Section: Introductionmentioning

confidence: 99%

FABRICATION OF HIGHLY DENSE PURE 6H-SiC CERAMICS VIA THE PVT METHOD USING SUB-MICRON SiC POWDERS

Liu¹

2020

Ceramics - Silikaty

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The dense SiC ceramics were prepared by the physical vapour transport (PVT) method using three types of SiC powder with different grain size, including a kind of SiC powder with a mean diameter of 500 nm. The effects of the grain size of the raw materials on the bulk density, bending strength and hardness of the SiC ceramics were studied. It was found that with a decreasing grain size, the bulk density and the bending strength of the fabricated SiC ceramics increased, while the Vickers hardness decreased. the effects of the grain size of the raw materials on the nucleation density and the growth rate of the SiC were analysed, and the growth characteristic of the SiC ceramics was systematically explored. The results indicated that the crystal type, the nucleation density and the growth rate were obviously affected by the soaking temperature. When the temperature was higher or lower than 2200 °C, the fabricated ceramics was composed of a 6H-SiC polycrystalline or the mixture of a 6H-SiC and 3C-SiC polycrystalline. Meanwhile, with an increasing temperature, the nucleation density decreased and the growth rate increased. Obviously, by optimising the fabrication process, highly dense 6H-SiC ceramics with a bulk density of 3.07 g•cm-3 and a bending strength of 335.6 ± 10 MPa could be rapidly fabricated by the PVT method using the sub-micron SiC powder.

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“…Increasing the supersaturation of carbon in the growth system should therefore lead to an increase in the SiC crystal growth rate. Several experiemental studies investigaing the increase of the furnace temperature and/or pressure on carbon supersaturation during crystal growth has been reported .…”

Section: Introductionmentioning

confidence: 99%

Total pressure‐controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki

Gao

Nishizawa

et al. 2016

Crystal Research and Technology

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A total pressure-controlled physical vapor transport growth method that stabilizes SiC polytype is proposed. The supersaturation of carbon during SiC growth changed as a function of the growth time due to changes in the temperature difference between the surfaces of the source and the grown crystal. Supersaturation also varied as a function of the pressure inside the furnace. Therefore, modification of the pressure as a function of growth time allowed for constant supersaturation during growth. The supersaturation was calculated based on classical thermodynamic nucleation theory using data for heat and species of Si 2 C and SiC 2 transfer in a furnace obtained from a global model. Based on this analysis, a method for polytype-stabilized SiC growth was proposed that involves decreasing the pressure as a function of growth time. The 4H-SiC prepared using this pressure-controlled method was more stable than that of 4H-SiC formed using the conventional constant-pressure method.

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Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Cited by 21 publications

References 19 publications

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

FABRICATION OF HIGHLY DENSE PURE 6H-SiC CERAMICS VIA THE PVT METHOD USING SUB-MICRON SiC POWDERS

Total pressure‐controlled PVT SiC growth for polytype stability during using 2D nucleation theory

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