Thermoelectric power, Hall coefficient, and structure properties of Ta thin films rf sputtered in Ar–N₂–O₂

Abstract

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Properties of rf-sputtered indium–tin-oxynitride thin films

“…For example, monometallic and bimetallic oxynitrides have been investigated as catalysts, 1 silicontin and lithium-phosphorus oxynitrides have been applied in thin-film lithium-ion batteries for microelectronics, 2 and other oxynitrides have been investigated for either their properties ͑ZrON, 3 CuON, 4 TaON, 5 NbON͒ 6 or for specific applications like gas sensors ͑InON͒, 7 transparent and conductive layers in optoelectronic devices ͑InON, 8 ZnON, 9 TiON͒ 10 and optical or hard coatings ͑TiON, 10 SiON͒. 11 Reactive sputtering is the predominant deposition technique employed to fabricate these oxynitride thin films from either an elemental target in O 2 -N 2 -Ar gas mixtures or an oxide target in N 2 -Ar plasma.…”

“…However, the reproducibility of the properties of the oxynitride films is very dependent on the sputtering processes and condition of the target, and these can become very complex when plasma is formed by simultaneously using two reactive gases, like oxygen and nitrogen. 5,12 Indium-tin-oxide ͑ITO͒ is widely used as a conductive transparent layer on many electronic and optoelectronic devices. It is an n-type degenerate semiconductor, with both substitutional oxygen vacancies and tin contributing to its high conductivity.…”