Thermoelectric properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type CuInSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>chalcopyrites enhanced by introduction of manganese

Yao, Jinlei; Takas, Nathan J.; Schliefert, Megan L.; Paprocki, David S.; Blanchard, Peter E. R.; Gou, Huiyang; Mar, Arthur; Exstrom, Christopher L.; Darveau, Scott A.; Poudeu, Pierre F. P.; Aitken, Jennifer A.

doi:10.1103/physrevb.84.075203

Cited by 61 publications

(42 citation statements)

References 52 publications

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“…The existence of two different cations results in two different bond distances for A−X and B−X, which yields lattice distortion and a smaller band gap than the original ZnTe type structure. [57] There are no vacancies in the diamond like structure, and the p-type conductivity is mainly attributed to the close proximity of the top of valence band to the Fermi level. The low lattice thermal conductivity and electrical conductivity originate from the distortion of the unit cell caused by the structure, [57][58] which could be simply characterized by the parameter δ (δ = c/a, where c and a are lattice parameters).…”

Section: Ternary A-b-x System (Group 3)mentioning

confidence: 99%

“…[57] Deficiency of elements, alloying, and the formation of nanocomposites are also effective routes for enhancing their thermoelectric performance. [62h, 63] In addition to the formation of stoichiometric compounds, ternary I B -III A -VI A (I B = Cu, Ag; III A = Al, Ga, In; VI A = S, Se, Te) also can form "non-stoichiometric" compounds with complex crystal structures.…”

Section: Ternary A-b-x System (Group 3)mentioning

confidence: 99%

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Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

Han

Sun

et al. 2016

Advanced Energy Materials

173

114

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Due to the urgency of our energy and environmental issues, a variety of cost-effective and pollution-free technologies have attracted considerable attention, among which thermoelectric technology has made enormous progress. Substantial numbers of new thermoelectric materials are created with high figure of merit (ZT) by using advanced nanoscience and nanotechnology. This is especially true in the case of metalchalcogenide-based materials, which possess both relatively high ZT and low cost among all the different kinds of thermoelectric materials. Here, comprehensive coverage of recent advances in metal chalcogenides and their correlated thermoelectric enhancement mechanisms are provided. Several new strategies are summarized with the hope that they can inspire further enhancement of performance, both in metal chalcogenides and in other materials. Disciplines Engineering | Physical Sciences and Mathematics Publication DetailsHan, C., Sun, Q., Li, Z. & Dou, S. X. (2016) Several new strategies are summarized with the hope that they can inspire further enhancement of performance, both in metal chalcogenides and in other materials.2

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Section: Ternary A-b-x System (Group 3)mentioning

confidence: 99%

Section: Ternary A-b-x System (Group 3)mentioning

confidence: 99%

Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

Han

Sun

et al. 2016

Advanced Energy Materials

173

114

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“…For example, a decrease in electrical conductivity as a function of temperature is observed for all Cu 2 Sn 1-x In x Se 3 samples where x>0 [32]. In the case of Mn-doped CuInSe 2 ; however, the degenerate semiconductor behavior is not observed until the temperature reaches ~ 425 °C [33]. In Fig.…”

Section: Seebeck Coefficient and Electrical Conductivity As A Functiomentioning

confidence: 92%

“…8a, decreases rapidly with rising temperature as a result of the stronger phonon-phonon scattering (especially the Umklapp processes) at higher temperatures. By comparison to Mn-substituted CuInSe 2 , which displays similar behavior and magnitude of the thermal conductivity, the value for κ would likely dip well below 2 µV/K at temperatures above 500 K [33]. The thermal conductivity of the chalcopyrite system can be further reduced by appropriate inclusion of secondary phases as phonon dispersion centers.…”

Section: Thermal Conductivity and Thermoelectric Figure Of Merit Detementioning

confidence: 98%

Thermoelectric transport properties of CuFeInTe3

Cabrera

Zumeta-Dubé

Korte

et al. 2015

Journal of Alloys and Compounds

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In this paper we report on the preparation of CuFeInTe 3 and its thermoelectric properties. Optical diffuse reflectance and Raman scattering spectroscopies, as well as X-ray powder diffraction were also carried out. Unprecedented for CuFeInTe 3 , a direct and an indirect bang gap were found from its absorption spectrum. From Hall effect measurements at 300 K the carrier concentration (n), electrical conductivity (σ) and mobility (µ) were determined. In order to investigate whether this material is suitable for thermoelectric applications, the Seebeck coefficient (S), the thermal conductivity (κ) and σ as a function of temperature were measured. The measurements of Hall and Seebeck coefficients showed that alloying CuInTe 2 with Fe 2+ produces a change from the original p-type to n-type conductivity and causes a decrease in κ value, while leaving σ unchanged. Relatively large S values were found for CuFeInTe 3 , with respect to CuInTe 2 , which were explained on the basis of a probable electron effective mass increase due to Fe 2+ incorporation. It was also found, that thermal and electrical conductivities decrease with increasing temperature in the range between 300 and 450 K, while the figure of merit (zT) reaches values of 0.075 and 0.126 at 300 and 450 K respectively. Thus, zT of CuFeInTe 3 increases with temperature, reaching values larger than those reported for CuInTe 2 .

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“…The BE value of Cu2p3/2 at x=0.1 is around 932.55 eV, almost identical to that for x=0 (~932.50 eV) (Fig.S3a), confirming the existence of Cu + . 26 Similarly, the Ga2p3/2 peak position from the sample with x=0.1 is at the same position as x=0 (Fig.S3b) 32 Since the Sb 3+ has an ionic radius of 0.76 Å and electronegativity =2.05, it is expected to occupy the Cu sites (ionic radius of Cu + = 0.77 Å, electronegativity =1.9), which is leading to the overlap of wave function of antimony with tellurium for the formation of the Sb-Te bond. 31 The occupation of Sb in Cu sites below x≤0.05 can also be verified by the shrinkage of crystal lattice, as shown in Fig.1.…”

Section: Xps and Raman Spectra Analysesmentioning

confidence: 99%

Enhanced thermoelectric performance via the solid solution formation: The case of pseudobinary alloy (Cu2Te)(Ga2Te3)3 upon Sb substitution for Cu

Cui

Liu

et al. 2017

Materials & Design

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In this work we have observed the beneficial effect from the solid solution formation on the thermoelectric performance of (Cu2(1-x)Sb2xTe)(Ga2Te3)3 upon Sb substitution for Cu. This substitution allows the mixed occupations of Sb in the crystal lattice, i.e. Sb at Cu sites with x≤0.05 and at Ga sides with x≥0.05, which has resulted in the Pisarenko relation does not exactly capture the measured Seebeck coefficient under assumed effective masses m*. The reduction of the lattice thermal conductivity (κL) has been quantified within the temperature range from room temperature to 723 K. Over the entire composition range, the κL value is reduced by 33% and 25% at temperature 723 K and 580 K, respectively. This observation is in a good agreement with the theoretical calculation based on the Callaway model used in the solid solutions. Along with the increasing of the mobility and electrical conductivity, the thermoelectric performance has been improved with the highest ZT value of 0.58 at 723 K, which is about double the value of intrinsic (Cu2Te)(Ga2Te3)3. Keywords: IntroductionAlthough the transformation of waste heat into useful electric power is very attractive so far, the conversion effectiveness is still low because of poor thermoelectric (TE) performance of the materials. Therefore, searching for new materials is one of the great challenges facing the members of TE research community. The TE performance is directly dependent on the dimensionless figure of merit (ZT),

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Thermoelectric properties ofp-type CuInSe2chalcopyrites enhanced by introduction of manganese

Cited by 61 publications

References 52 publications

Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

Thermoelectric transport properties of CuFeInTe3

Enhanced thermoelectric performance via the solid solution formation: The case of pseudobinary alloy (Cu2Te)(Ga2Te3)3 upon Sb substitution for Cu

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