Thermoelectric properties of porous SiC/C composites

Fujisawa, Masashi; Hata, Toshimitsu; Kitagawa, Hiroyuki; Bronsveld, P.M.; Suzuki, Youki; Hasezaki, Kazuhiro; Noda, Yasutoshi; Imamura, Yuji

doi:10.1016/j.renene.2007.07.010

Cited by 29 publications

(21 citation statements)

References 9 publications

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“…In the case of samples containing smaller amounts of silicon (P1, 0.44 g/cm 3 ; B1, 0.32 g/cm 3 ), the obtained electrical conductivity values were in the range of the values shown by other authors for some SiC composites and fibers [20,21]. In Table 2, some of those values are given.…”

Section: Electrical Conductivitysupporting

confidence: 55%

Electrical Conductivity of SiC/Si Composites Obtained from Wood Preforms

Béjar

Mena

Toro

2011

Zeitschrift Für Naturforschung A

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Biomorphic SiC/Si composites were produced from pine and beech wood, and the corresponding electrical conductivity was determined as a function of the temperature. Firstly, wood preforms were pyrolized at 1050 • C in nitrogen. Then, the pyrolized preforms were impregnated with liquid silicon and kept at 1600 • C for 2 h in vacuum. The SiC/Si composites were obtained due to the produced carbothermal reaction. As expected, the resulting electrical conductivity of these composites increased with the temperature and with the silicon content.

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Section: Electrical Conductivitysupporting

confidence: 55%

Electrical Conductivity of SiC/Si Composites Obtained from Wood Preforms

Béjar

Mena

Toro

2011

Zeitschrift Für Naturforschung A

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“…The samples using H2 as the diluent gas also showed a negative sign, corresponding to an n-type semiconductor behavior. 20), 21) In N2 atmosphere, Seebeck coefficient decreased with increasing deposition temperature, while, in contrast, when H2 diluent gas was used, Seebeck coefficient increased as deposition temperature increased. The value of Seebeck coefficient was insensitive to change in measure temperature up to 800°C.…”

Section: Jcs-japanmentioning

confidence: 95%

A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variation

Kim

Choi

et al. 2009

J. Ceram. Soc. Japan

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Chemical vapor deposited (CVD) silicon carbide (SiC) provides many advantages over other materials due to its high thermal, chemical and mechanical stability at high temperature. For these reasons, CVD SiC has replaced Si in components for semiconductor process. For application of CVD SiC to semiconductor fabrication equipment, thermoelectric properties controls are important. Therefore, we have studied the effects of different diluent gases, deposition temperatures and microstructures of deposited SiC on change of thermoelectric properties. The electrical conductivity of SiC which used N2 diluent gas was larger than SiC deposited with H2 diluent gas. Electrical resistivity varied by an order of 10 2 for different diluent gases at the same deposition temperature, and Seebeck coefficient also depended on the gas used. Additionally, SiC deposited with H2 showed n-type semiconductor behavior while that deposited with N2 showed p-type characteristics.

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“…16 In particular, SiC deposited with He diluent gas had a high absolute value over the entire measured temperature range of 50°C to 950°C, since more porous SiC ceramics have high Seebeck coefficient. 17 According to several references, 17,18 SiC shows n-type behavior when it is highly doped or has a porous microstructure. Observing SiC samples deposited with Ar or He gas by SEM, a porous structure was observed and SiC showed n-type behavior when measuring the Seebeck coefficient, which proves that the Seebeck coefficient varies according to structural changes of SiC.…”

Section: Microstructurementioning

confidence: 99%

Study on the Thermoelectric Properties of CVD SiC Deposited with Inert Gases

Kim

Choi

et al. 2011

Journal of Elec Materi

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We deposited silicon carbide (SiC) by the chemical vapor deposition (CVD) method using the inert gases Ar and He. It was confirmed that SiC deposited with inert gases had a porous microstructure and high carbon content. We also studied the thermoelectric properties. SiC deposited with He gas had lower electrical and thermal conductivity compared with SiC deposited with Ar gas. Both samples using Ar and He exhibited a negative Seebeck coefficient, indicating n-type semiconductor behavior. The calculated figure of merit (Z) of SiC deposited with inert gases was improved compared with SiC deposited with H 2 or N 2 gas. The value for SiC deposited with He was higher than that for SiC deposited with Ar. The thermoelectric properties of porous silicon carbide deposited with inert gases were also compared with those of silicon carbide deposited with hydrogen or nitrogen gas.

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Thermoelectric properties of porous SiC/C composites

Cited by 29 publications

References 9 publications

Electrical Conductivity of SiC/Si Composites Obtained from Wood Preforms

Electrical Conductivity of SiC/Si Composites Obtained from Wood Preforms

A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variation

Study on the Thermoelectric Properties of CVD SiC Deposited with Inert Gases

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