Thickness dependence of electrical and piezoelectric properties of ferroelectric Ba0.8Sr0.2TiO3 thin films

Киселев, Д. А.; Afanasiev, M. S.; Levashov, S. A.; Sivov, A A; Чучева, Г. В.

doi:10.1016/j.tsf.2016.10.064

Cited by 10 publications

(4 citation statements)

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“…The results in Figures 5 and 6 demonstrate progressive improvement of the dielectric properties of the tunable complex oxide thin films with increasing applied power of the postgrowth microwave field. The values of the dielectric constant obtained in this work (470-480 at zero bias) are comparable with values cited in the literature for similar systems [6,9]. Although the increase in tunability of the film is not significant (38% for the film treated with 1000 W microwave field vs. 32% for untreated film), the dielectric loss and leakage current when the film is biased show progressive significant improvement for the films that were postgrowth treated with an MW field at 500 and 1000 W, respectively.…”

Section: Thin Film Dielectric Propertiessupporting

confidence: 89%

“…This is due to their temperature and frequency stability, low-tuning voltages, relatively low losses, cost, and their fast response [1,2]. Postprocessing of tunable complex oxide thin films became a common practice to establish or improve dielectric properties of these films [3] grown by such methods as metallo-organic solution deposition (MOSD) [4], RF magnetron sputtering [5][6][7][8][9], metal-organic chemical vapor deposition (MOCVD) [10], and others. In addition to improving the crystallinity of the thin films, this postgrowth processing allows augmenting of the oxygen deficiency in the films through various approaches [11].…”

Section: Introductionmentioning

confidence: 99%

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The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

et al. 2019

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Tunable complex oxide thin films have generated a lot of interest in recent years due to their potential to become a core technology in the new generation of multiple communications devices. These films are grown via different deposition methods and frequently postprocessed in order to enhance their dielectric properties. This paper discusses an alternative postprocessing technique where complex oxide thin films grown by radio frequency (RF) magnetron sputtering have been treated with an external microwave field instead of a conventional furnace. The treated films and untreated reference film were characterized for their microstructure and dielectric properties. The obtained results indicate a significant reduction in dielectric losses and leakage current in the microwave processed films as opposed to the untreated reference. The results are discussed together with potential additional benefits of the proposed approach.

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Section: Thin Film Dielectric Propertiessupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

et al. 2019

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“…We also note that perovskite ferroelectrics tend to show higher PFM amplitude when they are thicker. [35][36][37] Assuming LFO and YFO have similar ε 33 and Q 3333 and considering that the LFO sample is thinner than YFO, the measurements of PFM amplitude, which is proportional to d 33 , implies that LFO has a higher polarization than YFO (as predicted [19] ), but lower than BFO.…”

Section: Resultsmentioning

confidence: 99%

Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films

Cho

Klyukin

et al. 2023

Adv Elect Materials

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oxides are strongly influenced by point defects resulting from a nonideal cation stoichiometry. [7][8][9][10][11][12] Such point defects can be present in much higher concentrations in thin films compared to bulk, due to epitaxial stabilization of a crystal structure with a composition deviating from bulk. [11,12] The orthoferrites (RFeO 3 ) are perovskite-derived structures in which tilting of the Fe octahedra yields an orthorhombic lattice with four formula units (f.u.) per unit cell. [13] Fe 3+ cations are coupled antiferromagnetically with Néel temperature T N ≈ 640 K. The Dzyaloshinskii-Moriya interaction (DMI) between neighboring Fe 3+ leads to a small canting angle and a net moment ≈0.05 µ B per f.u. at room temperature. The antiferromagnetic configuration of Fe 3+ (Γ 1 , Γ 2 , or Γ 4 in Bertaut notation) and the magnetic transition temperatures between different antiferromagnetic states varies with the rare earth. For a nonmagnetic R 3+ such as Lu 3+ , the configuration remains Γ 4 (G x A y F z , i.e., G-type antiferromagnet with spins oriented along x, with secondary A-type antiferromagnetic arrangement along y, and a net moment along z) from 0 K up to T N . [14,15] Some orthoferrites can exhibit multiferroicity at cryogenic temperatures when R 3+ ions are magnetically ordered. [16] The mechanism for such ferroelectricity is the exchange interaction between R 3+ and Fe 3+ , which leads to ionic displacement, breaks the symmetry, and thus leads to polarization on the order of 0.1 µC cm −2 . [16,17] Introducing room-temperature ferroelectricity into antiferromagnetic orthoferrites is an appealing strategy to expand the range of room temperature multiferroic materials. The most widely studied multiferroic is BiFeO 3 (BFO), which is a rhombohedral or tetragonal structure. Its ferroelectricity is derived primarily from the Bi 3+ lone pairs and exhibits a high ferroelectric Curie temperature (T C = 1103 K). [18] As in the rare earth orthoferrites, the magnetism in BFO arises from the canting of antiferromagnetically ordered Fe 3+ spins with T N = 643 K. Rare earth orthoferrites lack the lone pairs of BFO, and the centrosymmetric orthorhombic space group (Pbnm) prohibits ferroelectricity. However, Y Fe antisite defects in Y-rich yttrium orthoferrite YFeO 3 (YFO) thin films bring about a noncentrosymmetric structural distortion and induce ferroelectric polarization of ≈10 µC cm −2 at room temperature. [19][20][21] According to first principles calculations, such an antisite defect mechanism is expected to be applicable in other rare earth rich orthoferrites, with the polarization increasing with decreasing ionic radius of R 3+ ; LuFeO 3 (LFO) lies at the higher end of This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO 3 orthoferrite thin films with different Lu/Fe ratios. LuFeO 3 thin films are grown by pulsed laser deposition on SrTiO 3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO 3 is antiferromagnetic with a weak canted moment perpendicular to the f...

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“…Interest in magnetic nanocomposites based on opal matrices with embedded nanoparticles of magnetically ordered substances -the materials for the production of devices components mutually transforming magnetic and electrical signals has been growing recently. So, a typical iron titanate ferroelectric (FeTiO 3 ), obtained at high pressures, is in the nanostructured state [1] and exhibits ferromagnetic properties and spontaneous polarization analogous to typical ferroelectrics [2]. A large magnetoelectric effect is also observed in a wide class of metal titanate compounds, such as rare-earth element titanates, having the formula R 2 TiO 5 (oxotitanates) или R 2 Ti 2 O 7 (dithitanates), where R is a rear earth element (Er, Dy, Gd, La, Nd, Tb, Y, Yb).…”

Section: Introductionmentioning

confidence: 99%

Magnetic Nanocomposites Based on Opal Matrices

Belyanin¹,

Bagdasarian

et al. 2018

KEM

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Features of obtaining magnetic nanocomposites based on the lattice packing of SiO2 nanoscale (opal matrices) with clusters of multiferroic materials (Li-Zn, Bi, Fe, Dy, Gd and Yb titanates) in their interstitial cavities have been considered. For magnetic nanocomposites creation opal matrices with SiO2 nanoscale of ~ 260 nm in diameter have been used. The composition of nanocomposites has been also studied using X-ray diffractometry and Raman spectroscopy. The results of the frequency dependences measurement for the dielectric constant of the nanostructures obtained have been presented. Hysteresis loops have been examined for the samples obtained in the temperature range from 2 to 400 K.

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Thickness dependence of electrical and piezoelectric properties of ferroelectric Ba0.8Sr0.2TiO3 thin films

Cited by 10 publications

References 20 publications

The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films

Magnetic Nanocomposites Based on Opal Matrices

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Thickness dependence of electrical and piezoelectric properties of ferroelectric Ba0.8Sr0.2TiO3 thin films

Cited by 10 publications

References 20 publications

The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films

Magnetic Nanocomposites Based on Opal Matrices

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Product

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Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films