Thickness-dependent resistance switching in Cr-doped SrTiO3

Kim, Taekwang; Du, Hyewon; Kim, Minchang; Seo, Sunae; Hwang, Inrok; Kim, Yeonsoo; Jeon, Jonggu; Lee, Sangik; Park, Bae Ho

doi:10.3938/jkps.61.754

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Mechanism Of Resistive Switching In Cr:a-sto X Mim Devices1

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2018

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“…The inherent Vos in the Ti-O6 octrahedra that are created by preferentially removing the oxygen atoms due to the heavy Ar + ion bombardment during the sputtering process [27], generate conduction band electrons in the Ti 3d states. However, doping with Cr (via co-sputtering from a metallic Cr target) localizes the conduction band electrons by trapping them at Cr sites, which reduces the Cr from Cr 4+ to Cr 3+ species [66,67]. Consequently, no conduction electrons are introduced in the Ti 3d states and therefore the pristine Cr:a-STOx oxide exhibits an insulating nature.…”

Section: Mechanism Of Resistive Switching In Cr:a-sto X Mim Devicesmentioning

confidence: 99%