2016
DOI: 10.1007/s10853-016-9863-1
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Thickness-modulated metal–insulator transition of VO2 film grown on sapphire substrate by MBE

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Cited by 34 publications
(12 citation statements)
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“…Moreover, as the film thickness increased from S1 to S3, the resistivity in both the insulator and metallic phase decreased remarkably, while the amplitude ΔA increased slightly (as shown in the inset of Figure 4 ). The dependence of the MIT properties of VO 2 film on film thickness was supposed to be associated with tensile strain relaxation with increasing thickness; the detailed mechanism has been discussed and elucidated in our previous report [ 10 , 13 ]. What is more, it would also be related to the surface composition of the VO 2 thin film, which would be confirmed later by XPS analysis.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Moreover, as the film thickness increased from S1 to S3, the resistivity in both the insulator and metallic phase decreased remarkably, while the amplitude ΔA increased slightly (as shown in the inset of Figure 4 ). The dependence of the MIT properties of VO 2 film on film thickness was supposed to be associated with tensile strain relaxation with increasing thickness; the detailed mechanism has been discussed and elucidated in our previous report [ 10 , 13 ]. What is more, it would also be related to the surface composition of the VO 2 thin film, which would be confirmed later by XPS analysis.…”
Section: Resultsmentioning
confidence: 99%
“…In Shenzhen, Shenzhen, China). Details of the deposition process have been reported in our previous papers [ 10 , 13 ]. All of the parameters, such as substrate temperature, chamber pressure, and metallic vanadium evaporation rate, as well as the O 2 flux rate, were optimized for high quality VO 2 films.…”
Section: Methodsmentioning
confidence: 99%
“…The weaker intensity peaks in 6H-SiC are an E2 planar acoustic mode at 147 cm −1 [21]. The data in Figure 2a,b show the room temperature M1 phase Raman spectrum of VO 2 /6H-SiC films at 143 (Bg), 191 (Ag), 222 (Ag), 260 (Bg), 307 (Bg), 335 (Ag), 385 (Ag) , 439 (Bg), 497 (Ag) and 612 cm −1 (Ag) [22]. Meanwhile, no other peaks were observed, which proved that high quality VO 2 films can be grown on 6H-SiC substrate.…”
Section: Resultsmentioning
confidence: 99%
“…Various techniques have been developed to form VO 2 thin films, for instance, molecular beam epitaxy [7], pulsed laser deposition [8], magnetron sputtering [9], and chemical vapor deposition [10]. Over the past decades, high-quality VO 2 thin films with the single crystalline characteristics have been seeking because of the impact on MIT features.…”
Section: Introductionmentioning
confidence: 99%