2002
DOI: 10.1016/s0040-6090(01)01678-9
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Thin film atomic layer deposition equipment for semiconductor processing

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Cited by 272 publications
(159 citation statements)
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“…HfO 2 -Al 2 O 3 [1], ZrO 2 -Al 2 O 3 [2][3][4][5][6], ZrO 2 -Y 2 O 3 [7], ZrO 2 -SiO 2 [7], HfO 2 -Al 2 O 3 [8,9], TiO 2 - [18,20], ZrO 2 -Er 2 O 3 [21], ZrO 2 -Gd 2 O 3 [22], and TiO 2 -Cr 2 O 3 [23].…”
Section: Introductionmentioning
confidence: 99%
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“…HfO 2 -Al 2 O 3 [1], ZrO 2 -Al 2 O 3 [2][3][4][5][6], ZrO 2 -Y 2 O 3 [7], ZrO 2 -SiO 2 [7], HfO 2 -Al 2 O 3 [8,9], TiO 2 - [18,20], ZrO 2 -Er 2 O 3 [21], ZrO 2 -Gd 2 O 3 [22], and TiO 2 -Cr 2 O 3 [23].…”
Section: Introductionmentioning
confidence: 99%
“…Such oxide-based nanolaminates have been studied as materials able to provide good compromise between leakage current density and dielectric permittivity, enhancing charge storage capability of capacitor dielectrics while aiming at the improvement of the performance of, e.g., electroluminescent devices [10,14], field effect transistors [2,7,13,18,20], and memories [5,9,16,21,22]. Especially important industrially are the ZrO 2 -Al 2 O 3 -ZrO 2 structures [24] used in dynamic random access memory cells.…”
Section: Introductionmentioning
confidence: 99%
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“…ALD is essentially a modified chemical vapor deposition (CVD) process where the reaction pathway is separated into two separate half-reactions. In general, ALD deposition is described a sequence of discrete, self-limiting, surface reactions where the absorption of the reactive species to the surface is the dominate process step (Sneh et al 2002).…”
Section: Mesh Generationmentioning
confidence: 99%
“…The self-limiting nature of the chemistries implemented in ALD process produce high quality, dense and nearly pinhole-free films with thickness control at the atomic level, excellent thickness uniformity and unequalled conformality. ALD has been demonstrated to produce films that are nearly perfectly conformal even for nanoporous substrates whose pore depth to diameter ratio far exceeds ten to one [22][23][24].…”
Section: Introductionmentioning
confidence: 99%