2002
DOI: 10.1016/s0921-5093(01)01883-4
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Thin film interreaction of Al/Ag analyzed by tomographic atom probe

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Cited by 43 publications
(14 citation statements)
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“…The schematic and instrumental details of the sputter deposition are described elsewhere [5]. It is very important to clean the substrate by ion beam prior to deposition to achieve good mechanical stability of the specimen [15]. The base pressure of the deposition chamber before deposition is 10 À 5 Pa. Ar pressure during the sputtering is 2 Â 10 À 2 Pa.…”
Section: Methodsmentioning
confidence: 99%
“…The schematic and instrumental details of the sputter deposition are described elsewhere [5]. It is very important to clean the substrate by ion beam prior to deposition to achieve good mechanical stability of the specimen [15]. The base pressure of the deposition chamber before deposition is 10 À 5 Pa. Ar pressure during the sputtering is 2 Â 10 À 2 Pa.…”
Section: Methodsmentioning
confidence: 99%
“…For the analysis, tips were introduced into the tomographic atom probe at Go¨ttingen university, which was build around a detector system [14]. Switching between tip cleaning and coating is achieved by a simple rotation of the specimen stage.…”
Section: Sample Preparation and Measurementmentioning
confidence: 99%
“…Oxide layers of reproducible composition and defined thickness were prepared by reactive sputter deposition. For this, an ion beam chamber was used which is described elsewhere [19]. An oxygen pressure of 10 −2 Pa during the deposition enabled the formation of NiO layers of a stoichiometry that corresponds to the composition of natural nickel oxide.…”
Section: Methodsmentioning
confidence: 99%