Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

Abstract

Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells Appl. Phys. Lett. 101, 221110 (2012) Error analysis for concentrated solar collectors J. Renewable Sustainable Energy 4, 063125 (2012) Effects of the Al cathode evaporation rate on the performance of organic solar cells APL: Org. Electron. Photonics 5, 251 (2012) Effects of the Al cathode evaporation rate on the performance of organic solar cells

Nano-textured superstrates for thin film silicon solar cells: Status and industrial challenges

“…Even if textures such as nano-rods or nano-wires seem impressing from the optical point of view, their application of thin film silicon remains challenging in terms of device integration. Such high-aspect ratio optical features should be embedded in an otherwise electronically flat interface, such as already introduced for the n-i-p counterparts of a-Si/uc-Si/uc-Si triple junction devices and Micromorph TM [30,31].…”

Triple-junction amorphous/microcrystalline silicon solar cells: Towards industrially viable thin film solar technology

“…The advantage of using an etched glass/etched ZnO combination is to provide a sufficiently light-scattering substrate with a rather smooth surface topography for subsequent PECVD silicon deposition; this substrate is a first draft of a type of flat-diffusing substrate as already well demonstrated in thin-film silicon n-i-p configurated devices [28,29]. The advantage of such substrates for the triple cell application is that it allows the use of very thin diluted a-Si:H layers with good conformal growth (i.e.…”

New progress in the fabrication of n–i–p micromorph solar cells for opaque substrates

“…This configuration has demonstrated stabilized efficiencies above 13% and 12.5% on relatively smooth HotAg [52] and physically flat/optically rough substrates [53,54], respectively, which enable the growth of high-electronic-quality silicon layers, leading to high V oc and FF values. As they are deposited on smooth substrates, the mc-Si:H layers of triple junctions are relatively thick compared to those in micromorph devices deposited on rough electrodes.…”