Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Abstract

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

“…Thin‐film transistors (TFTs) based on transparent metal oxide semiconductors represent an emerging technology that promises to revolutionize large‐area electronics due to the high carrier mobility,1 optical transparency,2 mechanical flexibility,3 and the potential for low‐temperature processing 4. Like many other transistor technologies, the performance level of oxide TFTs ultimately depends on the intrinsic properties of the semiconducting material employed 5.…”

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

“…Among the available flexible semiconductor films, indiumgallium-zinc-oxide (IGZO) has shown perhaps the most commercial potential due to its high electron mobility and possibility of low-temperature film deposition on plastic substrates [2][3][4][5][6] . It has already seen rapid adoption as the channel material in backplane driver transistors in some newest flat-panel displays, where a transistor speed of 200 Hz suffices 7,8 .…”

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

“…In this regard, recent transparent transistor research efforts have focused on enhancing transparency and flexibility while maintaining or enhancing key TFT performance metrics. There have been several recent reports of transparent transistors fabricated with ZnO, SnO 2 , In 2 O 3 or other semiconducting oxide thin films, or with carbon nanotube networks as the active channel layers and opaque source and drain metals, or with carbon nanotube films and transparent source/drain electrodes [4][5][6][7][8][9][10][11] . However, there have been no reports of fully transparent oxide nanowire transistors (NWTs) fabricated with all-transparent gate and source/drain electrodes and displaying high transistor performance.…”