Thin-Film Transistor &lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;$V_{\rm th}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Wang, Lisa Ling; Liu, Tony Chi; Cai, Yuying; Zhang, Shengdong

doi:10.1109/ted.2014.2309980

Cited by 15 publications

(2 citation statements)

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“…From Region 1 to 3, the initial V TH shifts positively and shows a large ∆V TH after stress. This ∆V TH dependence on V TH can be explained based on the band diagram, where x 0 is the intersection of the Fermi level (E F ) and trap level (E T ), and most electrons are trapped between x 0 and x 1 , as shown in Figure 6 e [ 45 , 46 ]. As shown in Figure 3 c, as the Al doping concentration increases, E F approaches the conduction band minimum.…”

Section: Resultsmentioning

confidence: 99%

“…In other words, electrons trapped deep cannot be easily detrapped through recovery at room temperature, and as V TH shifts positively, the rate of slow trap increases. Meanwhile, ∆V TH increases with V G and stress caused by x 1 moving away from the semiconductor–dielectric interface as the electric field applied to the oxide dielectric increases, implying that the electrons are trapped deeper [ 46 ]. Notably, compared to ∆V TH , the degree of recovery in region 1 was less than that in region 2.…”

Section: Resultsmentioning

confidence: 99%

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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%