Thin-film transistors with polymorphous silicon active layer

High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350°C

“…High quality nc-Si film with high crystallinity and no incubation layer was fabricated by ICP-CVD without employing any additional techniques such as a deposition of a seed layer prior to the nc-Si deposition or a use of SiF 4 , SiH 2 Cl 2 or a plasma treatment on the surface [6,[13][14][15][16][17]. The fabrication of nc-Si film with dense crystalline structure in our experiment can be attributed to ICP-CVD which generates remote plasma of high density [10][11][12] and use of He as a dilution gas instead of H 2 [18].…”

“…There have been various studies to fabricate top gate structure nc-Si TFTs and bottom gate structure nc-Si TFTs [1][2][3][4][5]. The top gate structure nc-Si TFTs were superior to the bottom gate structure nc-Si TFTs in terms of field effect mobility [5,6]. To fabricate high performance bottom gate nc-Si TFT comparable to top gate nc-Si TFT, a fully crystallized nc-Si film as an active layer is essential.…”

“…It has been reported that this incubation layer leads to inferior TFT characteristics such as low field effect mobility and threshold voltage shift [9]. Efforts to reduce the incubation layer of the nc-Si film have been performed [6].…”

PECVD grown hydrogenated polymorphous silicon studied using current transient spectroscopies in PIN Diodes

“…The presence of crystallites in the amorphous matrix of polymorphous silicon is related to improved medium range order. [5,6 ] Due to the very nature of the material, we expect to observe novel phenomenon such as room temperature photoluminescence which are not present in the amorphous counterpart. [2,3 ] A comparison of amorphous and polymorphous silicon samples has shown polymorphous silicon to have a much lower density of states.…”

Deposition of high crystallinity poly-Si films on glass substrate and fabrication of high mobility bottom-gate TFT

“…Therefore, it is directly associated with how the poly-Si films are deposited in the CVD poly-Si TFTs. Above all, performance of the bottom-gate TFTs, is governed by the film quality deposited on a gate insulator at the early stage of the film deposition [4]. Therefore, it is also a good indicator of how the film quality is at the early stage of the film growth.…”