Thin Fluorine-Doped Tin Oxide Films Prepared Using an Electric Field-Modified Spray Pyrolysis Deposition Technique

Gupta, Archana; Pandya, Dinesh K.; Kashyap, Subhash C.

doi:10.1143/jjap.43.l1592

Cited by 11 publications

(4 citation statements)

References 12 publications

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“…Where k is the wavelength of X-ray radiation used,  is the peak position angle and d is the inter-planar distance. Therefore the ITO films retain the bulk structure of In 2 O 3 (a = 10.12 A˚) but exhibit a slight increase in the lattice constant (a =10.22 A˚) which was found to be in agreement with the literature [8]. The lattice constant depends on the deposition of parameters and varies for ITO from 10.118 to 10.31 A˚.…”

Section: X-ray Diffraction Studiessupporting

confidence: 87%

Nanoparticles of In2O3/SnO2 (90/10) and (80/20) at Two Different Proportions and Its Properties

Ayeshamariam¹,

Vidhya²,

Sivakumar³

et al. 2013

OJMetal

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ITO nanoparticles were obtained by combustion reaction of urea as fuel. The gel form structures were fired at 350°C in furnace for 20 min to yield powdery products and these products were calcined to five different temperatures from 100°C to 500°C for an hour to yield ITO powders. From the scanning electron microscopy (SEM) photographs and particle size analysis the average sizes of the cubic particle of powders are found to be less than 15 nm and less than 20 nm respectively. The ratio of doping concentration In/Sn is 90/10 and 80/20. The X-ray diffraction (XRD) data were evaluated by Scherer equation for the estimation of the average crystal size of the powders (less than 20 nm) for 90/10 and (less than 25 nm) for 80/20. The synthesized ITO powder characterized by XRD, UV-Vis-NIR and PL shows high specific surface area and possesses small primary crystallite size and good optical band gap.

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Section: X-ray Diffraction Studiessupporting

confidence: 87%

Nanoparticles of In2O3/SnO2 (90/10) and (80/20) at Two Different Proportions and Its Properties

Ayeshamariam¹,

Vidhya²,

Sivakumar³

et al. 2013

OJMetal

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“…Sn 0.90 Co 0.10 O 2−δ , has been co-doped with different doping levels of fluorine to purposely further increase the free electron concentration. It is well known that the free electron concentration in SnO 2 can be increased either by doping it with Sb or with F [28][29][30]. Three samples of It is known that a greater concentration of carriers and their large mass are the two important requisites for producing a strong Ruderman-Kittel-Kasuya-Yosida type ferromagnetic interaction between the localized impurity spins [31].…”

Section: Resultsmentioning

confidence: 99%

Evidence of carrier mediated room temperature ferromagnetism in transparent semiconducting Sn_1−xCo_xO_2−δthin films

Gopinadhan¹,

Kashyap

Pandya³

et al. 2008

J. Phys.: Condens. Matter

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Magnetic ordering in Co-substituted spray pyrolyzed SnO 2 thin films has been investigated by magneto-transport studies of Sn 1−x Co x O 2−δ and F co-doped films. The free carrier concentration and room temperature ferromagnetism induced in Sn 1−x Co x O 2−δ thin films with cobalt concentrations up to x = 0.10 are found to be closely related to each other. Both the carrier concentration and the saturation magnetic moment increase monotonically with the concentration of Co, and attain maximum values of 2.2 × 10 19 cm −3 and 0.26 μ B /Co-ion, respectively, at x = 0.10. The substitution of O 2− with F − (nearly 10 atomic percent (a/o)) has resulted in much higher values of both carrier concentration (2.07 × 10 20 cm −3 ) and magnetic moment (0.80 μ B /Co-ion). Also, anomalous behavior of the Hall effect has been observed. The carrier mediated interaction is proposed to be the most probable mechanism responsible for ferromagnetism in these films. The temperature dependence of the magnetization of these films predicts a Curie temperature exceeding 573 K. All the films are optically transparent (>75%) in the visible spectral region.

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“…Highly conductive FTO films have been synthesised with resistivities as low as 10 −4 Ω cm, carrier concentrations on the order of 10 20 cm −3 , and Hall mobilities which are in the range ca. 1–20 cm 2 /Vs .…”

Section: Introductionmentioning

confidence: 99%

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Potter

Bhachu

Powell

et al. 2016

Physica Status Solidi (a)

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Al‐, Ga‐, and In‐doped ZnO thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) at a deposition temperature of 450 °C. The air‐stable compound zinc acetylacetonate [Zn(acac)2] was used as a Zn source, whilst for the dopants of Al, Ga and In, the corresponding trichloride was used. Methanol solutions of the metal salts were used as precursor solutions and N2 carrier gas was used for the aerosol. Films were grown in approximately 30 min and were synthesised using dopant values of 5, 10, 15 and 20 mol.% (with respect to the Zn) in the precursor solution. XRD analysis showed that the films were wurtzite ZnO. XPS analysis confirmed the presence of the dopants in the films. Several of the films showed high transparency (>80%) in the visible range, and low resistivity (∼10−3 Ω cm).

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Thin Fluorine-Doped Tin Oxide Films Prepared Using an Electric Field-Modified Spray Pyrolysis Deposition Technique

Cited by 11 publications

References 12 publications

Nanoparticles of In2O3/SnO2 (90/10) and (80/20) at Two Different Proportions and Its Properties

Nanoparticles of In2O3/SnO2 (90/10) and (80/20) at Two Different Proportions and Its Properties

Evidence of carrier mediated room temperature ferromagnetism in transparent semiconducting Sn_1−xCo_xO_2−δthin films

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

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Thin Fluorine-Doped Tin Oxide Films Prepared Using an Electric Field-Modified Spray Pyrolysis Deposition Technique

Cited by 11 publications

References 12 publications

Nanoparticles of In2O3/SnO2 (90/10) and (80/20) at Two Different Proportions and Its Properties

Nanoparticles of In2O3/SnO2 (90/10) and (80/20) at Two Different Proportions and Its Properties

Evidence of carrier mediated room temperature ferromagnetism in transparent semiconducting Sn1−xCoxO2−δthin films

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

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Evidence of carrier mediated room temperature ferromagnetism in transparent semiconducting Sn_1−xCo_xO_2−δthin films