Thin InSb films on GaAs substrates by Molecular Beam Epitaxy

Abstract

We consider F and D-term cosmic strings formed in supersymmetric theories. Supersymmetry is broken inside the string core, but restored outside. In global SUSY, this implies the existence of goldstino zero modes, and the string potentially carries fermionic currents. We show that these zero modes do not survive the coupling to gravity, due to the super Higgs mechanism. Therefore the superconductivity and chirality properties are different in global and local supersymmetry. For example, a string formed at the end of D-term inflation is chiral in supergravity but non-chiral in global SUSY.

Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy

“…However, it is difficult to epitaxially grow InSb because of its large lattice parameter. Thus, so far, there is no report on the selective growth of InSb on an insulator; however, research on the same has been conducted using GaAs and Si as substrates [10,11].…”

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

“…(b) Scatter plot of electron mobility of the resulting InSb film compared with previously reported results at room temperature. 9,11,13,14…”

“…Therefore, as defects are reduced by curing processes during growth, the electron mobility of the film increases. 14,17−21,23…”

“…Defects due to lattice mismatch can be minimized by using certain growth techniques. For example, a metamorphic-buffer technique has been developed on commercially available substrates such as GaAs, and Si. , According to several reported studies on the growth of high-quality InSb on GaAs substrates, the lattice mismatch problem can be partially solved by using a step-graded buffer (SGB) of AlSb and InAlSb. − It is also important to provide optimized growth conditions, such as growth temperature and growth rate, for the SGB of the AlSb and InAlSb. − For instance, Sato et al grew a 2 μm thick InSb active structure on GaAs substrates using an AlSb and In 1– x Al x Sb SGB technique, while Biefeld and Phillips used an InAlSb buffer layer. , In addition, Mishima et al used an In 1– x Al x Sb/In 1– y Al y Sb short-period super-lattice layer to reduce dislocations by changing the composition of In and Al. As a result, they reported a decrease in defects between the InSb/In 1– x Al x Sb and In 1– x Al x Sb/In 1– y Al y Sb interfaces and have proposed analytical modeling for In 1– x Al x Sb buffer layers based on structural analysis. − …”

Growth Modes of Ba on Mo(110) Substrate

“…systems have also been performed [9][10][11]. RHEED specular beam intensity oscillations have come to be an important reliable process tool for controlling the film thickness and the surface flatness mainly for semiconductor materials [12][13][14][15][16]. Also, several reports indicate that the RHEED specular beam intensity oscillations were succeeded in observing the ideal layer-by-layer growth even in case of metal/metal systems with different lattice structures [17][18][19][20].…”