Thin oxide growth on 6H-silicon carbide

Vathulya, V.R.; Wagner, William E.; Miller, F.C.; White, M.H.

doi:10.1016/s0167-9317(97)00042-7

Cited by 10 publications

(6 citation statements)

References 4 publications

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“…[2][3][4] Oxygen atoms generated by decomposition of HNO 3 molecules at the surface are the most probable oxidizing species:…”

Section: Discussionmentioning

confidence: 99%

“…Using the NAVOS method, oxidation of SiC proceeds at 600 • C, which is lower by more than 400 • C than the thermal oxidation temperature. [2][3][4] Oxygen atoms generated by decomposition of HNO 3 molecules at the surface are the most probable oxidizing species: 22…”

Section: Discussionmentioning

confidence: 99%

“…[2][3][4] For improvement of interfacial characteristics of SiO 2 /SiC structure, extensive studies have been performed so far, including heat treatments in N 2 O and NH 3 , 5,6 formation of oxynitride by heating in N 2 O or NO, 7,8 oxidation in oxygen-containing trichloroethylene, 9,10 hydrogen treatment at high temperatures in the range between 800 and 1000…”

mentioning

confidence: 99%

“…On the other hand, SiC is much more chemically stable than Si, and consequently thermal oxidation of SiC for the formation of gate oxides in metal-oxide-semiconductor (MOS) devices requires more than 200 • C higher temperature (i.e., ∼1100 • C) than that of Si. [2][3][4] For improvement of interfacial characteristics of SiO 2 /SiC structure, extensive studies have been performed so far, including heat treatments in N 2 O and NH 3 , 5,6 formation of oxynitride by heating in N 2 O or NO, 7,8 oxidation in oxygen-containing trichloroethylene, 9,10 hydrogen treatment at high temperatures in the range between 800 and 1000 • C, 11,12 etc. In spite of these studies, interface state densities at SiO 2 /SiC interfaces are more than one order of magnitude higher than those for SiO 2 /Si interfaces.…”

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confidence: 99%

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Mechanism of Low Temperature Oxidation of 4H-SiC by Nitric Acid Vapor Oxidation Method at 600°C

Matsumoto

Joe

Kobayashi

2017

ECS J. Solid State Sci. Technol.

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Oxidation of 4H-SiC proceeds at 600 • C by use of nitric acid vapor. The plots of the SiO 2 thickness vs. the square root of the oxidation time are linear, indicating that diffusion of oxidizing species is the rate-determining step. The initial oxidation rate of the C-faced surfaces is 3 times higher than that of the Si-faced surfaces. It is found from cross-sectional transmission electron micrography (TEM) measurements that the SiO 2 thickness is uniform and steps originating from miss-orientation from the (000−1) direction having 0.25 nm height are present before and after oxidation, showing that oxidation of SiC proceeds only from step-edges along the (−1100) direction for the C-face and the (1−100) direction for the Si-face.

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“…[2][3][4] Oxygen atoms generated by decomposition of HNO 3 molecules at the surface are the most probable oxidizing species:…”

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Mechanism of Low Temperature Oxidation of 4H-SiC by Nitric Acid Vapor Oxidation Method at 600°C

Matsumoto

Joe

Kobayashi

2017

ECS J. Solid State Sci. Technol.

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“…The p-well spacing is kept at 5 m (the p-well spacing in the inversion mode DIMOS in [1] was 12 m where the JFET pinch resistance is negligible) to make the JFET pinch resistance a significant fraction of the total . A 300-Å gate oxide is grown in steam at 1100 C with oxygen as the carrier gas to assist in the removal of carbon [12], [13]. A subsequent reoxidation anneal in steam at 950 C is performed to improve the interface quality [14].…”

Section: Device Fabricationmentioning

confidence: 99%

A novel 6H-SiC power DMOSFET with implanted p-well spacer

Vathulya

Shang

White

1999

IEEE Electron Device Lett.

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In this letter, we utilize a lower thermal budget with an aluminum doped p-well to minimize the effect of "step bunching" and a new structural design with deep spacer implants to prevent the JFET "pinching" action at small p-well spacings (5 m) in planar vertical double implanted MOSFET (DIMOS) devices fabricated on 6H-SiC. A specific ON-resistance of 42 m-cm 2 (further reducible by 35% through simple design modification), which represents a 100% reduction over devices which did not receive the spacer implants, is observed on the 2-m channel devices. This novel scheme will allow increased packing densities for high power applications using the DIMOS structure in SiC.

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Nitric acid oxidation method to form SiO2/3C–SiC structure at 120°C

Terakawa

Iwasa

et al. 2008

Applied Surface Science

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Thin oxide growth on 6H-silicon carbide

Cited by 10 publications

References 4 publications

Mechanism of Low Temperature Oxidation of 4H-SiC by Nitric Acid Vapor Oxidation Method at 600°C

Mechanism of Low Temperature Oxidation of 4H-SiC by Nitric Acid Vapor Oxidation Method at 600°C

A novel 6H-SiC power DMOSFET with implanted p-well spacer

Nitric acid oxidation method to form SiO2/3C–SiC structure at 120°C

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