cell (PVSCs) with good reproducibility, beneficial for improving success rate of products. Besides of the uniformity of perovskite layer, the fabrication of highly efficient PVSC with thick perovskite layer and good thickness tolerance is also urgent for future commercializatio n. [1b,2c,e,5] In the past three years, efforts on fabricating high-performance PVSCs with thick active layer were tried by both thermal evaporation and solution methods. [1b,2c,e,5a,6] The researches on the PVSCs based on perovskite film fabricated by thermal evaporation method revealed that there is an optimized film thickness ≈300 nm. Further increase the thickness of the perovskite film leads to the deterioration of open-circuit voltage (V oc ) and fill factor (FF) and the decline of PCE of the device. [6a,b,7] Though Bolink and co-workers [6a] reduce the effect of the unbalanced charge extraction for 900 nm thick PVSCs by increasing the conductivity of the hole transport layer (HTL), and improve the efficiency from 7.2% to 12.0%, which is still lower than the 285 nm thick one (12.7%). It is believed that the reduction of V oc and FF along with the increasing film thickness can be attributed to the roughening of the surface of the perovskite film and the perovskite/carrier transport layer interface as well, which brings more serious charge recombination. [6b,7] Similar phenomenon was also observed in the perovskite film prepared by spin-coating method. Gong and co-workers [6c] found that the PCE first increased with the increasing thickness of the MAPbI 3−x Cl x film, and reached to a maximum value about 12% in the case of 575 nm. Further thickening of the perov skite film was found to deteriorate the device performance because of the increase of surface roughness of the perovskite film and the inferior contact between electron transport layer (ETL) and thick active layer. Owning to the increased difficulty in controlling the morphology of the thick perovskite film and the resulting limited carrier diffusion lengths, poor charge extraction, serious charge recombination, it is rather hard to obtain thick film based high performance PVSCs as compared to those based on thinner junctions. To improve the morphology of the perovskite film with smooth and pinhole free surface, high crystallinity, High-performance perovskite solar cells (PVSCs) with absorber layer thickness insensitive features are important for practical fabrication, however these features are difficult to be realized. There are very few reports of the fabrication of polycrystalline PVSCs with power conversion efficienies (PCE) insensitive to film thickness beyond 600 nm. The main reason lies in more serious recombination of the thick perovskite layer compared to the thin layer. Herein, this challenge is addressed by a simple hot casting method to formulate high-quality perovskite film with enlarged grain size, high carrier mobility, and reduced defects. It is found that increasing the temperature to 70 °C can dramatically increase the film thickness and enlarge the...