Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs

Dutoit, M.; Bouvet, D.; Jing, Mi; Novkovski, N.; Letourneau, P.

doi:10.1016/0026-2692(94)90039-6

Cited by 14 publications

(2 citation statements)

References 21 publications

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“…Indeed, in preliminary studies performed using 99% 'H-enriched ammonia (N'H,), we found that the total amounts of 'H remaining in the films after thermal nitridation were approximately equal to one monolayer, and so any effect of hydrogen incorporation in the films observed using NH, with H in its natural abundance (99.99% H and 0.01% 'H) will necessarily compete with hydrogen adsorption, unless the samples are analyzed after thermal nitridation in situ (without being exposed to atmospheric air). There are a few analytical works per- [4] formed either in situ" or using deuterated ammonia," but they do not deal specifically with hydrogen content after thermal nitridation.…”

Section: Nh Nh + Hmentioning

confidence: 99%

Thermal Nitridation of SiO2 Films in Ammonia: The Role of Hydrogen

Baumvol

Stedile

Ganem

et al. 1996

J. Electrochem. Soc.

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We investigated the transport of hydrogenous species during thermal nitridation of silicon dioxide films in ammonia by means of isotopic tracing of hydrogen. The dependence of the amount of hydrogen incorporated in the oxynitride films on the nitriding temperature and time, ammonia pressure, and on the initial oxide thickness was determined using methods that allow discrimination between the incorporation of hydrogen in the oxynitride films during nitridation and the effect of hydrogen adsorption during exposure of the oxynitride films to air. The depth profiles of hydrogen and the numher of hydrogen atoms that are exchanged between the oxynitride films and the ammonia gas are also established. The results indicate that the nitridation is driven by a mechanism whereby ammonia diffuses toward the oxide/Si interface reacting with the silica network. The nitridation of the surface and of the interface creates diffusion barriers whose effect on the nitridation process, as well as on the incorporation of hydrogen in the oxynitride films, is discussed.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-14 to IP

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Section: Nh Nh + Hmentioning

confidence: 99%

Thermal Nitridation of SiO2 Films in Ammonia: The Role of Hydrogen

Baumvol

Stedile

Ganem

et al. 1996

J. Electrochem. Soc.

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“…Therefore, the presence of a layer about 1 nm thick (about three monoatomic layers), having properties different that the bulk SiO 2 is to be taken into consideration when studying MOS structures. Such a thin layer also plays a crucial role in the modification of the properties of SiO 2 /Si interface with nitridation (Mi et al, 1993;Novkovski, 1999), which is found to be an important method for improvement of electrical and reliability properties of metal/SiO 2 /Si structures (Dutoit et al, 1994).…”

Section: Silicon Dioxide Thin Filmsmentioning

confidence: 99%

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Novkovski

2014

Front. Mater.

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Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high-permittivity dielectrics (high-k ) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-k are discussed in this paper and directions for further development are indicated. Further progress also requires better understanding of the physical phenomena appearing in stacked high-k /interfacial layer dielectrics.

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Rapid Thermal Oxidation and Nitridation

Борисенко

Hesketh

1997

Rapid Thermal Processing of Semiconductors

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Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs

Cited by 14 publications

References 21 publications

Thermal Nitridation of SiO2 Films in Ammonia: The Role of Hydrogen

Thermal Nitridation of SiO2 Films in Ammonia: The Role of Hydrogen

Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors

Rapid Thermal Oxidation and Nitridation

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