Three-Dimensional Fermi-Surface Nesting in 1<i>T</i>-VSe<sub>2</sub>Studied by Angle-Resolved Photoemission Spectroscopy

Sato, Takafumi; Terashima, Kazuhiko; Souma, S.; Matsui, H.; Takahashi, Takashi; Yang, Hongbo; Wang, Shancai; Ding, Hong; Maeda, Nobuhiro; Hayashi, K.

doi:10.1143/jpsj.73.3331

Cited by 23 publications

(33 citation statements)

References 20 publications

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“…However, tunneling spectroscopy does not show any significant reduction in the LDOS at at the phase transition ( Fig. 1b), consistent with the tiny portion of the Fermi surface that is gaped in the CDW phase of 1 -VSe 2 25 . Moreover, the vanadium derived -band just below obscures the CDW gap.…”

supporting

confidence: 65%

Dimensional crossover of the charge density wave transition in thin exfoliated VSe ₂

Pásztor¹,

Scarfato²,

Barreteau³

et al. 2017

2D Mater.

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The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds 1 opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition temperature in layered dichalcogenides whose thickness dependence remains unclear in the ultrathin limit 2-5 .Here we present a detailed study of the thickness and temperature dependences of the CDW in VSe 2 by scanning tunnelling microscopy (STM). We show that mapping the real-space CDW periodicity over a broad thickness range unique to STM provides essential insight 6 . We introduce a robust derivation of the local order parameter and transition temperature based on the real space charge modulation amplitude. Both quantities exhibit a striking non-monotonic thickness dependence that we explain in terms of a 3D to 2D dimensional crossover in the FS topology. This finding highlights thickness as a true tuning parameter of the electronic ground state and reconciles seemingly contradicting thickness dependencies determined in independent transport studies.Following the ground-breaking exfoliation of graphite into one atom thin carbon sheets, an increasing number of layered compounds can now be isolated from their bulk matrix in the form of one to few unit-cell thin layers. These sheets often feature unique 7-9 or enhanced 2,10 properties in comparison to their parent bulk compounds. They depend on material thickness and can be further tuned through doping, electrostatic gating and assembly of distinct layers into complex heterostructures. Transition metal dichalcogenides (TMDs) are of particular interest in this context. They can be readily exfoliated into thin flakes down to the single unitcell limit 11 and offer a unique playground for studying the thickness dependence of their electronic properties. For example, in MoS 2 , photo active transitions become available in the

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supporting

confidence: 65%

Dimensional crossover of the charge density wave transition in thin exfoliated VSe ₂

Pásztor¹,

Scarfato²,

Barreteau³

et al. 2017

2D Mater.

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“…We found that monolayer VSe2 shows the insulating ground state in contrast to the metallic nature of bulk. Previous ARPES studies suggested that the CDW in bulk 1T-VSe2 is triggered by the FS nesting [11,12]. As shown in Fig.…”

Section: Resultsmentioning

confidence: 69%

“…To see more clearly the energy dispersion of the metallic V 3d band responsible for the anomalous physical properties, we show in Fig. 2 distinctly different from that of bulk VSe2 [11][12][13], suggesting that the change in the dimensionality and the resultant absence of interlayer interaction strongly influence the electronic states of monolayer VSe2.…”

Section: Resultsmentioning

confidence: 86%

Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D–2D crossover in monolayer VSe2

et al. 2018

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One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by 3D-2D crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials.

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“…It exhibits an incommensurate CDW with 4a × 4a × 3.18c periodic lattice distortion upon cooling to around 110 K, followed by a second transition to a commensurate CDW state at ∼ 80 K (Thompson and Silbernagel, 1979;Tsutsumi, 1982;Eaglesham et al, 1986;Terashima et al, 2003;Pandey and Soni, 2020). The mechanism of the 3D CDW was initially explained by Fermi-surface nesting resulting from the warped 3D electron pocket centered around the M point at the edge of the Brillouin zone (Terashima et al, 2003;Sato et al, 2004;Strocov et al, 2012). Recently, electron-phonon coupling was also found to contribute to the formation of the CDW (Pandey and Soni, 2020;Si et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Structural and Transport Properties of 1T-VSe2 Single Crystal Under High Pressures

et al. 2021

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Two-dimensional transition metal dichalcogenide 1T-VSe2 exhibits a unique three-dimensional charge density wave (CDW) order below ∼110 K at ambient pressure, which shows unusual evolution under pressure. Here we report on the high-pressure structural and transport properties of 1T-VSe2 by extending the pressure up to 57.8 GPa, through electrical transport, synchrotron X-ray diffraction (XRD) and Raman scattering measurements, which unravel two critical pressure points. The CDW transition is found to be enhanced under compression at a rate of 16.5 K/GPa up to the first critical pressure PC1 ∼ 12 GPa, at which a structural phase transition from hexagonal P-3m1 to monoclinic C2/m phase takes place. The second critical pressure PC2 ∼ 33 GPa corresponds to another structural transition from monoclinic C2/m to P21/m phase. These findings extend the phase diagram of pressurized 1T-VSe2 and may help to understand pressure tuning of structures in transition metal dichalcogenides.

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Three-Dimensional Fermi-Surface Nesting in 1T-VSe₂Studied by Angle-Resolved Photoemission Spectroscopy

Cited by 23 publications

References 20 publications

Dimensional crossover of the charge density wave transition in thin exfoliated VSe ₂

Dimensional crossover of the charge density wave transition in thin exfoliated VSe ₂

Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D–2D crossover in monolayer VSe2

Structural and Transport Properties of 1T-VSe2 Single Crystal Under High Pressures

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Three-Dimensional Fermi-Surface Nesting in 1T-VSe2Studied by Angle-Resolved Photoemission Spectroscopy

Cited by 23 publications

References 20 publications

Dimensional crossover of the charge density wave transition in thin exfoliated VSe 2

Dimensional crossover of the charge density wave transition in thin exfoliated VSe 2

Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D–2D crossover in monolayer VSe2

Structural and Transport Properties of 1T-VSe2 Single Crystal Under High Pressures

Contact Info

Product

Resources

About

Three-Dimensional Fermi-Surface Nesting in 1T-VSe₂Studied by Angle-Resolved Photoemission Spectroscopy

Dimensional crossover of the charge density wave transition in thin exfoliated VSe ₂

Dimensional crossover of the charge density wave transition in thin exfoliated VSe ₂