Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Dodd, P.E.; Sexton, F.W.; Winokur, P.S.

doi:10.1109/23.340536

Cited by 107 publications

(46 citation statements)

References 46 publications

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“…This pushes the electric field deep into the device, and a field-free region now exists near the top of the device where the induced carriers are located. This is exactly analogous to the phenomenon of "funneling" that occurs following a single ion strike, and that contributes to single-event upset in microelectronics [7,8]. In the present case, the TRM beam spot just looks like an ion strike with a very large lateral extent.…”

Section: Mark II Transient Radiation Microscope Resultssupporting

confidence: 60%

Radiation-Induced Prompt Photocurrents in Microelectronics: Physics

Dodd¹,

Vizkelethy²,

Walsh³

et al. 2003

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The effects of photocurrents in nuclear weapons induced by proximal nuclear detonations are well known and remain a serious hostile environment threat for the US stockpile. This report describes the final results of an LDRD study of the physical phenomena underlying prompt photocurrents in microelectronic devices and circuits. The goals of this project were to obtain an improved understanding of these phenomena, and to incorporate improved models of photocurrent effects into simulation codes to assist designers in meeting hostile radiation requirements with minimum build and test cycles. We have also developed a new capability on the ion microbeam accelerator in Sandia's Ion Beam Materials Research Laboratory (the Transient Radiation Microscope, or TRM) to supply ionizing radiation in selected microregions of a device. The dose rates achieved in this new facility approach those possible with conventional large-scale dose-rate sources at Sandia such as HERMES III and Saturn. It is now possible to test the physics and models in device physics simulators such as Davinci in ways not previously possible. We found that the physical models in Davinci are well suited to calculating prompt photocurrents in microelectronic devices, and that the TRM can reproduce results from conventional large-scale dose-rate sources in devices where the chargecollection depth is less than the range of the ions used in the TRM.3

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Section: Mark II Transient Radiation Microscope Resultssupporting

confidence: 60%

Radiation-Induced Prompt Photocurrents in Microelectronics: Physics

Dodd¹,

Vizkelethy²,

Walsh³

et al. 2003

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“…This charge can be collected at reverse-biased drain junctions via electrical drift and diffusion [16], [17]. The logic value stored in an SRAM cell will be lost if the circuit cannot dissipate the charge before feedback causes the cell to flip state [18].…”

Section: Single-event Upsets and Single-event Transientsmentioning

confidence: 99%

Schemes for eliminating transient-width clock overhead from SET-tolerant memory-based systems

Blum

Delgado-Frias

2006

IEEE Trans. Nucl. Sci.

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Abstract-In the presence of radiation, particle strikes can cause temporary signal errors in ICs. Particle strikes that directly affect memory are known as single event upsets (SEUs), while strikes that affect combinational logic and spread to memory are called single event transients (SETs). In this paper, we propose two novel approaches to hardening integrated circuits against SEUs and SETs. The proposed approaches are fully-differential dual-interlocked storage cell (DICE) and triple path DICE (TPDICE).The fully-differential DICE and TPDICE approaches are compared against two existing approaches, which are triple modular redundancy (TMR) and basic SET-tolerant DICE. All approaches except for the basic SET-tolerant DICE scheme share a common theme, which is the ability to bypass SEUs and SETs. This is critical for performance, as it allows the system to proceed with subsequent operations while a cell is recovering from the effects of a particle strike. SET pulse widths can be substantial (up to 2 ns), and so high-performance systems cannot afford to pause operations while these pulses are present. The minimum clock periods obtained for the basic SET-tolerant approach were 515 ps with no SET, and 1310 ps with a 500 ps SET (in 0.18 m CMOS). In contrast, the clock periods for the bypass-capable approaches with no SET/500 ps SET were 628/749 ps for TMR, 348/480 ps for fully-differential DICE, and 434/552 ps for TPDICE. Among the approaches that bypass transient pulses, TPDICE is the most balanced. TMR suffers from overhead due to its need for external voting circuitry. In addition to this, fully-differential DICE cannot be used with combinational logic, while TPDICE can.

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“…Charge-collection effects have been extensively studied both analytically [24], [25], [26], [27], [28] and using device simulators [29], [30], [31], e.g., DESSIS from ISE [32]. Identical tracks produced at different locations will have different effects on the circuit.…”

Section: Particle Tracks In Siliconmentioning

confidence: 99%

Characterization of soft errors caused by single event upsets in CMOS processes

Karnik

Hazucha

2004

IEEE Trans.Dependable and Secure Comput.

447

211

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Abstract-Radiation-induced single event upsets (SEUs) pose a major challenge for the design of memories and logic circuits in highperformance microprocessors in technologies beyond 90nm. Historically, we have considered power-performance-area trade offs. There is a need to include the soft error rate (SER) as another design parameter. In this paper, we present radiation particle interactions with silicon, charge collection effects, soft errors, and their effect on VLSI circuits. We also discuss the impact of SEUs on system reliability. We describe an accelerated measurement of SERs using a high-intensity neutron beam, the characterization of SERs in sequential logic cells, and technology scaling trends. Finally, some directions for future research are given.

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Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Abstract: In this paper, three-dimensional numerical simulation is used to explore the basic charge-collection mechanisms in silicon n+/p diodes. For diodes on lightly4oped substrates ( Show more

Cited by 107 publications

References 46 publications

Radiation-Induced Prompt Photocurrents in Microelectronics: Physics

Radiation-Induced Prompt Photocurrents in Microelectronics: Physics

Schemes for eliminating transient-width clock overhead from SET-tolerant memory-based systems

Characterization of soft errors caused by single event upsets in CMOS processes

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