Threshold energies in the light emission characteristics of silicon MOS tunnel diodes

Asli, N. A.; Vexler, M. I.; Shulekin, A. F.; Yoder, P. Douglas; Grekhov, I. V.; Seegebrecht, P.

doi:10.1016/s0026-2714(01)00079-8

Cited by 11 publications

(13 citation statements)

References 2 publications

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“…Both RR and IB optical transitions can be classified down into the direct and indirect ones. The threshold for a direct IB luminescence, 23,24 qV IB-d , is higher than qV IB and can be calculated considering the full Si band structure…”

Section: Optical Characterizationmentioning

confidence: 99%

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Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Illarionov

Vexler²,

Fedorov³

et al. 2014

Journal of Applied Physics

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Metal/CaF2/p-Si(111) capacitors with the improved-quality several-nanometer-thick epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for barrier layers in silicon devices. Structural and transport properties of a thin crystalline dielectric are characterized by different experimental techniques. The measured current-voltage characteristics accompanied with simulation results demonstrate that the elastic tunneling electron injection takes place in the considered structures. The same result follows from the behavior of hot-electron-injection-related electroluminescence within the selected spectral intervals. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes.

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Section: Optical Characterizationmentioning

confidence: 99%

“…where E dir is the maximum direct-transition energy 23 among all states with the given energy E ¼ E inj À E c1 (E c1 is the bulk-Si conduction band edge). Note that for MIS structures on n-Si, no any thresholds could be expected because of the smearing effect of the field in the depletion region.…”

Section: Optical Characterizationmentioning

confidence: 99%

Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Illarionov

Vexler²,

Fedorov³

et al. 2014

Journal of Applied Physics

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“…6. As a result of this, there will be a relationship between the photon energy emitted from such direct c-c transitions and the electron energy distribution in the conduction band [24]. The direct intraband c-c transitions should exhibit an emission spectrum shown in Fig.…”

Section: Intraband Transitionsmentioning

confidence: 99%

Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions

Plessis

Venter

Bellotti

2013

IEEE J. Quantum Electron.

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“…4. This effect known from SiO 2 diodes [6] has now been firstly observed for CaF 2 -based structures. The light emission is due to hot electrons injected through the tunnel-thin CaF 2 layer.…”

Section: Discussion On Optical Characteristicsmentioning

confidence: 68%

Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics

Illarionov¹,

Vexler²,

Fedorov³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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A detailed characterization of injection properties of epitaxial tunnel-thin calcium fluoride layers is performed. Electrical and optical behavior of Au/CaF 2 /Si capacitors is examined. The results allow for claiming that attained quality of the CaF 2 films is adequate for application as a barrier layer in microelectronics. Fig.1. Left: simulated band diagram of MIS structure with CaF 2 . Right: fragment of Si band structure.

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Threshold energies in the light emission characteristics of silicon MOS tunnel diodes

Cited by 11 publications

References 2 publications

Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions

Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics

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