Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs

Rhee, Se Jong; Lee, Jack C.

doi:10.1016/j.microrel.2005.01.006

Cited by 16 publications

(5 citation statements)

References 23 publications

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“…Based on the need to increase the drive current, the high-k gate dielectric in FinFET [14][15][16][17][18] is gradually applied to fit the requirement of HPC IC products. However, the manufacturing cost is very expensive.…”

Section: Resultsmentioning

confidence: 99%

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Liaw

Liao

Wang

et al. 2017

Физика И Техника Полупроводников

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The length of Source/Drain (S/D) extension (L SDE ) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer L SDE pFinFET provides a larger series resistance and degrades the drive current (I DS ), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter L SDE plus the shorter channel length demonstrates a higher trans-conductance (Gm) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer L SDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current.

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Section: Resultsmentioning

confidence: 99%

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Liaw

Liao

Wang

et al. 2017

Физика И Техника Полупроводников

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“…The main disadvantage of the SiO2-based RadFET (p channel MOSFET) radiation sensors, which are found in many areas, from radiotherapy clinics to radiation modules in the spacecraft, is that they cannot read the dose below 10 mGy with high accuracy [1]- [3]. The focus of most of the studies on FET-based microelectronic devices is to reduce device dimensions, using high-k dielectrics as the gate oxide layer [4], [5]. However, developments in this area have not yet been transferred to the radiation sensor field.…”

Section: Introductionmentioning

confidence: 99%

IRRADIATION EFFECT ON Er ₂ O ₃ /n-Si STRUCTURE UNDER HIGH GAMMA-RAY DOSE

Kahraman¹,

Morkoç²,

Mutale³

et al. 2020

RAP 2019 Conference Proceedings

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The aim of this study is to investigate the structural transformations of erbium oxide (Er2O3) dielectric which can be used as a sensitive region in the new generation RadFET radiation sensors under a high gamma dose. The Er2O3 film was grown on n-type Si (100) by RF magnetron sputtering and film thickness was measured as 118 nm. The samples were irradiated by a 60 Co radioactive source with the doses of 1 kGy, 25 kGy, and 50 kGy. The crystal structure samples were analysed by the X-ray diffraction method. The variation in the bond properties of the as-deposited Er2O3 film was investigated by X-ray photoelectron spectroscopy. The pre-irradiation Er2O3 film demonstrated an amorphous structure, and the peaks belonging to the cubic phase were observed after irradiation, their density increasing with increasing the dose. The Er 4d spectra of the Er2O3/Si films were two fitted peaks indicating Er-Er and Er-O bonds, except for the interface. The binding energy shifted to higher energies with increasing the depth from due to possible ErSiOx formation at the interface. The Si-O/Er-O and M/O ratios change with the applied dose and film depth.

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“…Many experimental studies of high-k materials such as aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), and zirconium oxide (ZrO 2 ) grown by atomic layer deposition (ALD) have been reported. [4][5][6][7][8][9][10][11][12][13][14] The ALD technique can control the uniformity and thickness of films on substrate surfaces at an atomic scale. 15,16 The important thing for the ALD process is the initial reaction between the molecule and surface, because it determines the high-k/surface interface structure.…”

Section: Introductionmentioning

confidence: 99%

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

Kim¹,

Kim²,

Jeong³

et al. 2010

Bulletin of the Korean Chemical Society

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We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom's lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 -0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 -0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

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Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs

Cited by 16 publications

References 23 publications

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

IRRADIATION EFFECT ON Er ₂ O ₃ /n-Si STRUCTURE UNDER HIGH GAMMA-RAY DOSE

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

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Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs

Cited by 16 publications

References 23 publications

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

IRRADIATION EFFECT ON Er 2 O 3 /n-Si STRUCTURE UNDER HIGH GAMMA-RAY DOSE

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

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Product

Resources

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IRRADIATION EFFECT ON Er ₂ O ₃ /n-Si STRUCTURE UNDER HIGH GAMMA-RAY DOSE